2SC3063

Power Transistors 2SC3063 Silicon NPN triple diffusion planar type For TV video output amplification 8.0+–00..15 Unit: mm 3.2±0.2 ■ Features φ 3.16±0.1 3.8±0.3 11.0±0.5 3.05±0.1 High collector-emitter voltage (Base open) VCEO Small collector output capacitance (Common base, input open circuited) Cob TO-126B package which requires no insulation plate for installa- tion to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 300 V c e. d ty Collector-emitter voltage (Base open) VCEO 300 V n d stag tinue Emitter-base voltage (Collector open) VEBO 7 V a e cle con Collector current IC 100 mA lifecy , dis Peak collector current ICP 200 mA n u duct typed Collector power dissipation PC 1.2 W te tin Pro ed Junction temperature Tj 150 °C ur tinu Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 4.6±0.2 2.3±0.2 0.5±0.1 1.76±0.1 123 1: Emitter 2: Collector 3: Base TO-126B-A1 Package in n s followlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 300 V tinue anc Collector-emitter voltage (Base open) VCEO IC = 0.1 mA, IB = 0 300 V M is con inten Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V /Dis ma Base-emitter voltage VBE VCE = 10 V, IC = 30 mA 1.2 V D a...