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2SC3072

Toshiba Semiconductor

Silicon NPN Transistor


Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High power dissipati...



Toshiba Semiconductor

2SC3072

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