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FGH40N60SFD

Fairchild Semiconductor

40A Field Stop IGBT

FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current ...


Fairchild Semiconductor

FGH40N60SFD

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Description
FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter, UPS, Welder, PFC, Microwave Oven, Telecom, ESS General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate-to-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient C G E Ratings 600 ±20 ±30 80 40 120 290 116 -55 to +150 -55 to +150 300 Typ. - Max. 0.43 1.45 40 Unit V V A A A W W oC oC oC Unit oC/W oC/W oC/W ...




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