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Stop IGBT. FGH40N60SFD Datasheet







FGH40N60SFD IGBT. Datasheet pdf. Equivalent






Part

FGH40N60SFD

Description

40A Field Stop IGBT

Manufacture

Fairchild Semiconductor

Datasheet
Download FGH40N60SFD Datasheet


Fairchild Semiconductor FGH40N60SFD

FGH40N60SFD; FGH40N60SFD — 600 V, 40 A Field Stop I GBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Cu rrent Capability • Low Saturation Vol tage: VCE(sat) = 2.3 V @ IC = 40 A • High Input Impedance • Fast Switching • RoHS Compliant Applications • So lar Inverter, UPS, Welder, PFC, Microwa ve Oven, Telecom, ESS General Descript ion Using novel field stop IGBT .


Fairchild Semiconductor FGH40N60SFD

technology, Fairchild’s field stop IGB Ts offer the optimum performance for so lar inverter, UPS, welder, microwave ov en, telecom, ESS and PFC applications w here low conduction and switching losse s are essential. E C G COLLECTOR (FLA NGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Des cription Collector to Emitter Voltage Gate to Emitter Vol tage Transient Gate-to-Emitter Voltage Collector Current Collector Current Pul sed Collector Current Maximum Power Dis sipation Maximum Power Dissipation Oper ating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purpo ses, 1/8” from case for 5 seconds No tes: 1: Repetitive r.



Part

FGH40N60SFD

Description

40A Field Stop IGBT

Manufacture

Fairchild Semiconductor

Datasheet
Download FGH40N60SFD Datasheet




 FGH40N60SFD
March 2015
FGH40N60SFD
600 V, 40 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC, Microwave Oven, Tele-
com, ESS
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder, microwave oven, telecom, ESS and PFC applications
where low conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
±20
±30
80
40
120
290
116
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.43
1.45
40
Unit
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.1.5
1
www.fairchildsemi.com





 FGH40N60SFD
Package Marking and Ordering Information
Part Number
FGH40N60SFDTU
Top Mark
FGH40N60SFD
Package Packing Method Reel Size Tape Width
TO-247
Tube
N/A N/A
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ΔBVCES
/ ΔTJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 μA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250 μA, VCE = VGE
IC = 40 A, VGE = 15 V
IC = 40 A, VGE = 15 V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 400 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 400 V, IC = 40 A,
VGE = 15 V
600 - - V
- 0.6 - V/oC
- - 250 μA
-
-
±400
nA
4.0 5.0 6.5
- 2.3 2.9
- 2.5 -
V
V
V
- 2110 -
- 200 -
- 60 -
pF
pF
pF
- 25 - ns
- 42 - ns
- 115 -
ns
-
27 54
ns
- 1.13 -
mJ
- 0.31 -
mJ
- 1.44 -
mJ
- 24 - ns
- 43 - ns
- 120 -
ns
- 30 - ns
- 1.14 -
mJ
- 0.48 -
mJ
- 1.62 -
mJ
- 120 -
nC
- 14 - nC
- 58 - nC
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.1.5
2
www.fairchildsemi.com



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