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Stop IGBT. FGH40N60SFTU Datasheet

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Stop IGBT. FGH40N60SFTU Datasheet






FGH40N60SFTU IGBT. Datasheet pdf. Equivalent




FGH40N60SFTU IGBT. Datasheet pdf. Equivalent





Part

FGH40N60SFTU

Description

Field Stop IGBT



Feature


www.DataSheet.co.kr FGH40N60SF 600V, 40 A Field Stop IGBT March 2009 FGH40N60 SF 600V, 40A Field Stop IGBT Features High current capability • Low satu ration voltage: VCE(sat) =2.3V @ IC = 4 0A • High input impedance • Fast sw itching • RoHS compliant tm General Description Using Novel Field Stop IGB T Technology, Fairchild’s new sesries of Field Stop IGBTs offer the.
Manufacture

Fairchild Semiconductor

Datasheet
Download FGH40N60SFTU Datasheet


Fairchild Semiconductor FGH40N60SFTU

FGH40N60SFTU; optimum performance for Inverter, UPS, SMPS and PFC applications where low con duction and switching losses are essent ial. Applications • Inverter, UPS, S MPS, PFC E C G COLLECTOR (FLANGE) A bsolute Maximum Ratings Symbol VCES VGE S IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to E mitter Voltage Collector Current Collec tor Current Pulsed C.


Fairchild Semiconductor FGH40N60SFTU

ollector Current Maximum Power Dissipati on Maximum Power Dissipation Operating Junction Temperature Storage Temperatur e Range Maximum Lead Temp. for solderin g Purposes, 1/8” from case for 5 seco nds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 100 C o o Ratings 600 ± 20 80 40 120 290 116 -55 to +15 0 -55 to +150 300 Units V V A A A W W o o o C C C Notes: .


Fairchild Semiconductor FGH40N60SFTU

1: Repetitive rating: Pulse width limite d by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) Rθ JA Parameter Thermal Resistance, Junct ion to Case Thermal Resistance, Junctio n to Ambient Typ. - Max. 0.43 40 Uni ts o o C /W C /W ©2008 Fairchild Sem iconductor Corporation 1 www.fairchil dsemi.com FGH40N60SF Rev.A Datasheet pdf - http://www.Data.

Part

FGH40N60SFTU

Description

Field Stop IGBT



Feature


www.DataSheet.co.kr FGH40N60SF 600V, 40 A Field Stop IGBT March 2009 FGH40N60 SF 600V, 40A Field Stop IGBT Features High current capability • Low satu ration voltage: VCE(sat) =2.3V @ IC = 4 0A • High input impedance • Fast sw itching • RoHS compliant tm General Description Using Novel Field Stop IGB T Technology, Fairchild’s new sesries of Field Stop IGBTs offer the.
Manufacture

Fairchild Semiconductor

Datasheet
Download FGH40N60SFTU Datasheet




 FGH40N60SFTU
www.DataSheet.co.kr
FGH40N60SF
600V, 40A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =2.3V @ IC = 40A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Inverter, UPS, SMPS, PFC
March 2009
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Inverter, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
± 20
80
40
120
290
116
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.43
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH40N60SF Rev.A
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/




 FGH40N60SFTU
www.DataSheet.co.kr
Package Marking and Ordering Information
Device Marking
Device
FGH40N60SF
FGH40N60SFTU
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 40A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 40A,
RG = 10, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 40A,
VGE = 15V
600 - - V
- 0.6 - V/oC
- - 250 µA
-
-
±400
nA
4.0 5.0 6.5
- 2.3 2.9
- 2.5 -
V
V
V
- 2110 -
- 200 -
- 60 -
pF
pF
pF
- 25 - ns
- 42 - ns
- 115 -
ns
-
27 54
ns
- 1.13 -
mJ
- 0.31 -
mJ
- 1.44 -
mJ
- 24 - ns
- 43 - ns
- 120 -
ns
- 30 - ns
- 1.14 -
mJ
- 0.48 -
mJ
- 1.62 -
mJ
- 120 -
nC
- 14 - nC
- 58 - nC
FGH40N60SF Rev. A
2
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/




 FGH40N60SFTU
www.DataSheet.co.kr
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
120
TC = 25oC
100
20V
15V
80
12V
60
40
20
0
0.0
10V
VGE = 8V
1.5 3.0 4.5
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
80
Common Emitter
VGE = 15V
60
TC = 25oC
TC = 125oC
6.0
40
20
Figure 2. Typical Output Characteristics
120
TC = 125oC
100
20V 15V
12V
80
60
10V
40
20
0
0.0
VGE = 8V
1.5 3.0 4.5
Collector-Emitter Voltage, VCE [V]
6.0
Figure 4. Transfer Characteristics
120
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
80
40
0
01234
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.0
Common Emitter
VGE = 15V
3.5
80A
3.0
2.5
40A
2.0
IC = 20A
1.5
1.0
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
0
6 8 10 12 13
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = -40oC
16
12
8
80A
4 40A
IC = 20A
0
4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
FGH40N60SF Rev. A
3
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/






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