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Stop IGBT. FGH40N60UF Datasheet







FGH40N60UF IGBT. Datasheet pdf. Equivalent




Part

FGH40N60UF

Description

Field Stop IGBT

Manufacture

Fairchild Semiconductor

Datasheet
Download FGH40N60UF Datasheet


Fairchild Semiconductor FGH40N60UF

FGH40N60UF; www.DataSheet.co.kr FGH40N60UF 600V, 40 A Field Stop IGBT July 2008 FGH40N60U F 600V, 40A Field Stop IGBT Features High current capability • Low satur ation voltage: VCE(sat) =1.8V @ IC = 40 A • High input impedance • Fast swi tching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the .


Fairchild Semiconductor FGH40N60UF

optimum performance for Induction Heatin g, UPS, SMPS and PFC applications where low conduction and switching losses ar e essential. Applications • Inductio n Heating, UPS, SMPS, PFC E C G COLL ECTOR (FLANGE) Absolute Maximum Rating s Symbol VCES VGES IC ICM (1) PD TJ Tst g TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collect or Current Collector Current Pulsed Collector Current Maximu m Power Dissipation Maximum Power Dissi pation Operating Junction Temperature S torage Temperature Range Maximum Lead T emp. for soldering Purposes, 1/8” fro m case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 1 00 C o o Ratings 600 ± 20 80 40 120 2 90 116 -55 to +150 -55 to +150 300 Uni ts V V A A A W W o o .



Part

FGH40N60UF

Description

Field Stop IGBT

Manufacture

Fairchild Semiconductor

Datasheet
Download FGH40N60UF Datasheet




 FGH40N60UF
www.DataSheet.co.kr
FGH40N60UF
600V, 40A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.8V @ IC = 40A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
July 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
± 20
80
40
120
290
116
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.43
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH40N60UF Rev. B
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/





 FGH40N60UF
www.DataSheet.co.kr
Package Marking and Ordering Information
Device Marking
Device
FGH40N60UF
FGH40N60UFTU
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 40A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 40A,
RG = 10, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 40A,
VGE = 15V
600 - - V
- 0.6 - V/oC
- - 250 µA
-
-
±400
nA
4.0 5.0 6.5
- 1.8 2.4
- 2.0 -
V
V
V
- 2110 -
- 200 -
- 60 -
pF
pF
pF
- 24 - ns
- 44 - ns
- 112 -
ns
-
30 60
ns
- 1.19 -
mJ
- 0.46 -
mJ
- 1.65 -
mJ
- 24 - ns
- 45 - ns
- 120 -
ns
- 40 - ns
- 1.2 - mJ
- 0.69 -
mJ
- 1.89 -
mJ
- 120 -
nC
- 14 - nC
- 58 - nC
FGH40N60UF Rev. B
2
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/



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