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Stop IGBT. FGH60N60SF Datasheet

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Stop IGBT. FGH60N60SF Datasheet






FGH60N60SF IGBT. Datasheet pdf. Equivalent




FGH60N60SF IGBT. Datasheet pdf. Equivalent





Part

FGH60N60SF

Description

Field Stop IGBT



Feature


www.DataSheet.co.kr FGH60N60SF 600V, 60 A Field Stop IGBT July 2008 FGH60N60S F 600V, 60A Field Stop IGBT Features High current capability • Low satur ation voltage: VCE(sat) =2.3V @ IC = 60 A • High input impedance • Fast swi tching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series o f Field Stop IGBTs offer the o.
Manufacture

Fairchild Semiconductor

Datasheet
Download FGH60N60SF Datasheet


Fairchild Semiconductor FGH60N60SF

FGH60N60SF; ptimum performance for Induction Heating , UPS, SMPS and PFC applications where low conduction and switching losses are essential. Applications • Induction Heating, UPS, SMPS, PFC E C G COLLE CTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter V oltage Gate to Emitter Voltage Collecto r Current Collector .


Fairchild Semiconductor FGH60N60SF

Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissip ation Operating Junction Temperature St orage Temperature Range Maximum Lead Te mp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 25oC @ TC = 10 0 C o o Ratings 600 ± 20 120 60 180 3 78 151 -55 to +150 -55 to +150 300 Uni ts V V A A A W W o o .


Fairchild Semiconductor FGH60N60SF

o C C C Notes: 1: Repetitive test, Pul se width limited by max. juntion temper ature Thermal Characteristics Symbol R θJC(IGBT) RθJA Parameter Thermal Res istance, Junction to Case Thermal Resis tance, Junction to Ambient Typ. - Max . 0.33 40 Units o o C /W C /W ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH60N60SF Rev . A Datasheet pdf - .

Part

FGH60N60SF

Description

Field Stop IGBT



Feature


www.DataSheet.co.kr FGH60N60SF 600V, 60 A Field Stop IGBT July 2008 FGH60N60S F 600V, 60A Field Stop IGBT Features High current capability • Low satur ation voltage: VCE(sat) =2.3V @ IC = 60 A • High input impedance • Fast swi tching • RoHS compliant tm General Description Using Novel Field Stop IGBT Technology, Fairchild’s new series o f Field Stop IGBTs offer the o.
Manufacture

Fairchild Semiconductor

Datasheet
Download FGH60N60SF Datasheet




 FGH60N60SF
www.DataSheet.co.kr
FGH60N60SF
600V, 60A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =2.3V @ IC = 60A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
July 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test, Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
± 20
120
60
180
378
151
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.33
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH60N60SF Rev. A
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/




 FGH60N60SF
www.DataSheet.co.kr
Package Marking and Ordering Information
Device Marking
Device
FGH60N60SF
FGH60N60SFTU
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 60A, VGE = 15V
IC = 60A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 60A,
RG = 5, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 60A,
RG = 5, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 60A,
VGE = 15V
600 - - V
- 0.4 - V/oC
- - 250 µA
-
-
±400
nA
4.0 5.0 6.5
- 2.3 2.9
- 2.5 -
V
V
V
- 2820 -
- 350 -
- 140 -
pF
pF
pF
- 22 - ns
- 42 - ns
- 134 -
ns
-
31 62
ns
- 1.79 -
mJ
- 0.67 -
mJ
- 2.46 -
mJ
- 22 - ns
- 44 - ns
- 144 -
ns
- 43 - ns
- 1.88 -
mJ
- 1.0 - mJ
- 2.88 -
mJ
- 198 -
nC
- 22 - nC
- 106 -
nC
FGH60N60SF Rev. A
2
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/




 FGH60N60SF
www.DataSheet.co.kr
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180
TC = 25oC
150
120
20V
15V
12V
10V
Figure 2. Typical Output Characteristics
180
TC = 125oC
150
120
20V
15V
12V
10V
90 90
60 60 VGE = 8V
VGE = 8V
30 30
0
0246
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
180
Common Emitter
150
VGE = 15V
TC = 25oC
120 TC = 125oC
8
0
02468
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer Characteristics
180
Common Emitter
VCE = 20V
150 TC = 25oC
TC = 125oC
120
90 90
60 60
30 30
0
012345
Collector-Emitter Voltage, VCE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.0
Common Emitter
VGE = 15V
3.5
120A
3.0
2.5
60A
2.0
IC = 30A
1.5
1.0
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
0
012345
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
TC = -40oC
16
12
8
120A
4 60A
IC = 30A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
FGH60N60SF Rev. A
3
www.fairchildsemi.com
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