DatasheetsPDF.com

Stop IGBT. FGH60N60SFD Datasheet

DatasheetsPDF.com

Stop IGBT. FGH60N60SFD Datasheet






FGH60N60SFD IGBT. Datasheet pdf. Equivalent




FGH60N60SFD IGBT. Datasheet pdf. Equivalent





Part

FGH60N60SFD

Description

Field Stop IGBT



Feature


www.DataSheet.co.kr FGH60N60SFD 600V, 6 0A Field Stop IGBT August 2008 FGH60N 60SFD 600V, 60A Field Stop IGBT Feature s • High current capability • Low s aturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • Fast switching • RoHS compliant tm Gene ral Description Using Novel Field Stop IGBT Technology, Fairchild’s new seri es of Field Stop IGBTs offer t.
Manufacture

Fairchild Semiconductor

Datasheet
Download FGH60N60SFD Datasheet


Fairchild Semiconductor FGH60N60SFD

FGH60N60SFD; he optimum performance for Induction Hea ting, UPS, SMPS and PFC applications wh ere low conduction and switching losses are essential. Applications • Induc tion Heating, UPS, SMPS, PFC E C G C G COLLECTOR (FLANGE) E Absolute Ma ximum Ratings Symbol VCES VGES IC ICM ( 1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Vol tage Collector Curre.


Fairchild Semiconductor FGH60N60SFD

nt Collector Current Pulsed Collector Cu rrent Maximum Power Dissipation Maximum Power Dissipation Operating Junction T emperature Storage Temperature Range Ma ximum Lead Temp. for soldering Purposes , 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25 C @ TC = 2 5oC @ TC = 100 C o o Ratings 600 ± 20 120 60 180 378 151 -55 to +150 -55 to +150 300 Units V V A.


Fairchild Semiconductor FGH60N60SFD

A A W W o o o C C C Notes: 1: Repetit ive test, Pulse width limited by max. j untion temperature Thermal Characteris tics Symbol RθJC(IGBT) RθJC(Diode) R JA Parameter Thermal Resistance, Junc tion to Case Thermal Resistance, Juncti on to Case Thermal Resistance, Junction to Ambient Typ. - Max. 0.33 1.1 40 Units o o C /W C /W o C /W ©2008 Fa irchild Semiconductor .

Part

FGH60N60SFD

Description

Field Stop IGBT



Feature


www.DataSheet.co.kr FGH60N60SFD 600V, 6 0A Field Stop IGBT August 2008 FGH60N 60SFD 600V, 60A Field Stop IGBT Feature s • High current capability • Low s aturation voltage: VCE(sat) =2.3V @ IC = 60A • High input impedance • Fast switching • RoHS compliant tm Gene ral Description Using Novel Field Stop IGBT Technology, Fairchild’s new seri es of Field Stop IGBTs offer t.
Manufacture

Fairchild Semiconductor

Datasheet
Download FGH60N60SFD Datasheet




 FGH60N60SFD
FGH60N60SFD
600 V, 60 A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 60 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
March 2015
General Description
Using novel field stop IGBT technology, Fairchild’s field stop
IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switch-
ing losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate-to-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test, Pulse width limited by max. juntion temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
±20
±30
120
60
180
378
151
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.33
1.1
40
Unit
V
V
A
A
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH60N60SFD Rev. 1.4
1
www.fairchildsemi.com




 FGH60N60SFD
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGH60N60SFDTU FGH60N60SFD TO-247
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ΔBVCES
/ ΔTJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 μA
Temperature Coefficient of Breakdown
Voltage
VGE = 0 V, IC = 250 μA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250 μA, VCE = VGE
IC = 60 A, VGE = 15 V
IC = 60 A, VGE = 15 V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 400 V, IC = 60 A,
RG = 5 Ω, VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 400 V, IC = 60 A,
VGE = 15 V
600 - - V
- 0.4 - V/oC
- - 250 μA
-
-
±400
nA
4.0 5.0 6.5
- 2.3 2.9
- 2.5 -
V
V
V
- 2820 -
- 350 -
- 140 -
pF
pF
pF
- 22 - ns
- 42 - ns
- 134 -
ns
-
31 62
ns
- 1.79 -
mJ
- 0.67 -
mJ
- 2.46 -
mJ
- 22 - ns
- 44 - ns
- 144 -
ns
- 43 - ns
- 1.88 -
mJ
- 1.0 - mJ
- 2.88 -
mJ
- 198 -
nC
- 22 - nC
- 106 -
nC
©2008 Fairchild Semiconductor Corporation
FGH60N60SFD Rev. 1.4
2
www.fairchildsemi.com




 FGH60N60SFD
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 30 A
TC = 25oC
TC = 125oC
trr
Qrr
Diode Reverse Recovery Time
IF = 30 A, diF/dt = 200 A/μs
Diode Reverse Recovery Charge
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
Typ.
2.0
1.8
47
179
83
567
Max
2.6
-
-
-
-
-
Unit
V
ns
nC
©2008 Fairchild Semiconductor Corporation
FGH60N60SFD Rev. 1.4
3
www.fairchildsemi.com






Recommended third-party FGH60N60SFD Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)