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FGH60N60UFD

Fairchild Semiconductor

Field-Stop IGBT

FGH60N60UFD — 600V, 60A Field Stop IGBT FGH60N60UFD 600V, 60A Field Stop IGBT Features • High Current Capability • Low ...


Fairchild Semiconductor

FGH60N60UFD

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Description
FGH60N60UFD — 600V, 60A Field Stop IGBT FGH60N60UFD 600V, 60A Field Stop IGBT Features High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 60 A High Input Impedance Fast Switching RoHS Compliant Applications Solar Inverter, UPS, Welder and PFC March 2015 General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. E C G COLLECTOR (FLANGE) Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate-to-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 25oC @ TC = 100oC Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: 1: Repetitive test , Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient C G E Ratings 600 ±20 ±30 120 60 180 298 119 -55 to +150 -55 to +150 300 Typ. - Max. 0.33 1.1 40 Unit V V A A A W W oC oC oC Unit oC/W oC/W oC/W ©2013 Fairchild Semiconductor Corporation 1 FGH60N60UFD Rev.1...




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