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N-Channel MOSFET. SI4462DY Datasheet

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N-Channel MOSFET. SI4462DY Datasheet






SI4462DY MOSFET. Datasheet pdf. Equivalent




SI4462DY MOSFET. Datasheet pdf. Equivalent





Part

SI4462DY

Description

N-Channel MOSFET



Feature


www.DataSheet.co.kr Si4462DY New Produc t Vishay Siliconix N-Channel 200-V (D -S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 D TrenchFETr Power MOSFET D P WM Optimized for Fast Switching ID (A) 1.50 1.45 rDS(on) (W) 0.480 @ VGS = 10 V 0.510 @ VGS = 6.0 V APPLICATIONS D Primary Side Switch D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Chan nel MOSFET G ABSO.
Manufacture

Vishay

Datasheet
Download SI4462DY Datasheet


Vishay SI4462DY

SI4462DY; LUTE MAXIMUM RATINGS (TA = 25_C UNLESS O THERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drai n Current Single Avalanch Current Singl e Avalanch Energy Continuous Source Cur rent (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Sto rage Temperature Range TA = 25_C TA = 7 0_C L = 0.1 mH TA .


Vishay SI4462DY

= 25_C TA = 70_C Symbol VDS VGS 10 sec s 200 "20 1.50 Steady State Unit V 1 .15 0.92 5 1.5 0.11 mJ 1.1 1.3 0.85 -55 to 150 W _C A A ID IDM IAS EAS IS PD TJ, Tstg 1.20 2.1 2.5 1.6 THERMAL RE SISTANCE RATINGS Parameter t v 10 sec M aximum Junction-to-Ambienta Maximum Jun ction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Docum ent Number: 72093 S-22.


Vishay SI4462DY

098—Rev. A, 02-Dec-02 www.vishay.com S teady State Steady State RthJA RthJF S ymbol Typical 40 70 20 Maximum 50 85 24 Unit _C/W 1 Datasheet pdf - http: //www.DataSheet4U.net/ www.DataSheet.c o.kr Si4462DY Vishay Siliconix New Pro duct SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zer o Gate Voltage Drain.

Part

SI4462DY

Description

N-Channel MOSFET



Feature


www.DataSheet.co.kr Si4462DY New Produc t Vishay Siliconix N-Channel 200-V (D -S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 D TrenchFETr Power MOSFET D P WM Optimized for Fast Switching ID (A) 1.50 1.45 rDS(on) (W) 0.480 @ VGS = 10 V 0.510 @ VGS = 6.0 V APPLICATIONS D Primary Side Switch D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Chan nel MOSFET G ABSO.
Manufacture

Vishay

Datasheet
Download SI4462DY Datasheet




 SI4462DY
www.DataSheet.co.kr
New Product
Si4462DY
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
0.480 @ VGS = 10 V
0.510 @ VGS = 6.0 V
ID (A)
1.50
1.45
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized for Fast Switching
APPLICATIONS
D Primary Side Switch
D
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Single Avalanch Current
Single Avalanch Energy
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
L = 0.1 mH
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
1.50
1.20
2.1
2.5
1.6
200
"20
5
1.5
0.11
-55 to 150
1.15
0.92
1.1
1.3
0.85
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72093
S-22098—Rev. A, 02-Dec-02
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
70
20
Maximum
50
85
24
Unit
_C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 SI4462DY
www.DataSheet.co.kr
Si4462DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 160 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 1.5 A
VGS = 6.0 V, ID = 1.45 A
VDS = 15 V, ID = 1.5A
IS = 2.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 100 V, VGS = 10 V, ID = 1.5 A
VDD = 100 V, RL = 100 W
ID ^ 1.0 A, VGEN = 10 V, RG = 6 W
IF = 2.1 A, di/dt = 100 A/ms
Min Typ Max Unit
2.0 4 V
"100
nA
1
mA
5
5A
0.39
0.420
5
0.8
0.480
0.510
1.2
W
S
V
69
0.9 nC
1.9
3.7 W
10 15
12 20
10 15 ns
15 25
55 90
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
5
4
3
2
1
0
0
www.vishay.com
2
Output Characteristics
VGS = 10 thru 5 V
4V
3V
2468
VDS - Drain-to-Source Voltage (V)
10
Transfer Characteristics
5
4
3
2
TC = 125_C
1
25_C
-55 _C
0
012345
VGS - Gate-to-Source Voltage (V)
Document Number: 72093
S-22098Rev. A, 02-Dec-02
Datasheet pdf - http://www.DataSheet4U.net/




 SI4462DY
www.DataSheet.co.kr
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.8
400
Si4462DY
Vishay Siliconix
Capacitance
0.6
VGS = 6 V
0.4
VGS = 10 V
0.2
0.0
01234
ID - Drain Current (A)
Gate Charge
10
VDS = 100 V
ID = 1.5 A
8
5
6
4
2
0
0123456
Qg - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
5
TJ = 150_C
1
TJ = 25_C
300 Ciss
200
100 Crss
Coss
0
0 20 40 60 80
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
VGS = 10 V
ID = 1.5 A
2.1
1.7
1.3
0.9
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.8
0.6 ID = 1.5 A
0.4
0.2
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Document Number: 72093
S-22098Rev. A, 02-Dec-02
0.0
0
2468
VGS - Gate-to-Source Voltage (V)
10
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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