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P-Channel MOSFET. SI4483EDY Datasheet

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P-Channel MOSFET. SI4483EDY Datasheet






SI4483EDY MOSFET. Datasheet pdf. Equivalent




SI4483EDY MOSFET. Datasheet pdf. Equivalent





Part

SI4483EDY

Description

P-Channel MOSFET



Feature


www.DataSheet.co.kr Si4483EDY Vishay Si liconix P-Channel 30-V (D-S) MOSFET PR ODUCT SUMMARY VDS (V) −30 FEATURES I D (A) −14 −11 rDS(on) (W) 0.0085 @ VGS = −10 V 0.014 @ VGS = −4.5 V D TrenchFETr Power MOSFET D ESD Protect ion: 3000 V APPLICATIONS D Notebook PC − Load Switch − Adapter Switch S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4483EDY-T1—E3 8 .
Manufacture

Vishay

Datasheet
Download SI4483EDY Datasheet


Vishay SI4483EDY

SI4483EDY; 7 6 5 D D D D G 7100 W P-Channel D AB SOLUTE MAXIMUM RATINGS (TA = 25_C UNLES S OTHERWISE NOTED) Parameter Drain-Sour ce Voltage Gate-Source Voltage Continuo us Drain Current (TJ = 150_C)a Pulsed D rain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissi pationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C T A = 25_C TA = 70_C.


Vishay SI4483EDY

Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "25 Unit V −14 −11 −50 −2.7 3.0 1.9 −5 5 to 150 −10 −8 A −1.36 1.5 0.9 5 W _C THERMAL RESISTANCE RATINGS Para meter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 x 1” FR4 Board. Document Number: 72 862 S-42139—Rev. B, 15-Nov-04 www.vishay.


Vishay SI4483EDY

.com t v 10 sec Steady State Steady Stat e Symbol RthJA RthJF Typical 33 70 16 Maximum 42 85 21 Unit _C/W 1 Datas heet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Si4483EDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNL ESS OTHERWISE NOTED) Parameter Static G ate Threshold Voltage Gate Body Leakage Gate-Body VGS(th) IGSS VDS = VGS, ID = −250 mA VDS = 0 V.

Part

SI4483EDY

Description

P-Channel MOSFET



Feature


www.DataSheet.co.kr Si4483EDY Vishay Si liconix P-Channel 30-V (D-S) MOSFET PR ODUCT SUMMARY VDS (V) −30 FEATURES I D (A) −14 −11 rDS(on) (W) 0.0085 @ VGS = −10 V 0.014 @ VGS = −4.5 V D TrenchFETr Power MOSFET D ESD Protect ion: 3000 V APPLICATIONS D Notebook PC − Load Switch − Adapter Switch S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4483EDY-T1—E3 8 .
Manufacture

Vishay

Datasheet
Download SI4483EDY Datasheet




 SI4483EDY
www.DataSheet.co.kr
Si4483EDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.0085 @ VGS = 10 V
30
0.014 @ VGS = 4.5 V
ID (A)
14
11
FEATURES
D TrenchFETr Power MOSFET
D ESD Protection: 3000 V
APPLICATIONS
D Notebook PC
Load Switch
Adapter Switch
SO-8
S1
S2
S3
G4
8D
7D
6D
5D
Top View
Ordering Information: Si4483EDY-T1—E3
S
G
7100 W
P-Channel
D
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS 30
VGS "25
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
14 10
11 8
50
2.7
1.36
3.0 1.5
1.9 0.95
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72862
S-42139—Rev. B, 15-Nov-04
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
33
70
16
Maximum
42
85
21
Unit
_C/W
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 SI4483EDY
www.DataSheet.co.kr
Si4483EDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
gfs
VSD
Dynamicb
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "4.5 V
VDS = 0 V, VGS = "25 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 14 A
VGS = 4.5 V, ID = 11 A
VDS = 15 V, ID = 14 A
IS = 2.7 A, VGS = 0 V
ID ^ V1DDA,=VG1E5NV=, R1L0=V1,5RWg = 6 W
1.0
30
3.0
"1
"10
1
10
0.007
0.0115
60
0.74
0.0085
0.014
1.1
V
mA
mA
mA
A
W
S
V
10 15
20 30
42 65 ms
50 80
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
8
6
4
2
0
0
www.vishay.com
2
5 10 15 20 25
VGS Gate-to-Source Voltage (V)
30
Gate Current vs. Gate-Source Voltage
100
10
1 TJ = 150_C
0.1 TJ = 25_C
0.01
0.001
0.0001
0
6 12 18 24
VGS Gate-to-Source Voltage (V)
30
Document Number: 72862
S-42139—Rev. B, 15-Nov-04
Datasheet pdf - http://www.DataSheet4U.net/




 SI4483EDY
www.DataSheet.co.kr
Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
VGS = 10 thru 4 V
40
3V
50
40
Transfer Characteristics
30 30
20
10
0
0
0.020
1234
VDS Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
20
10
0
0.0
TC = 125_C
25_C
55_C
0.5 1.0 1.5 2.0 2.5 3.0
VGS Gate-to-Source Voltage (V)
3.5
On-Resistance vs. Junction Temperature
1.6
0.016
0.012
0.008
VGS = 4.5 V
VGS = 10 V
1.4
1.2
1.0
0.004
0.8
0.000
0
50
10 20 30 40
ID Drain Current (A)
50
Source-Drain Diode Forward Voltage
TJ = 150_C
10
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
ID = 14 A
1 0.02
TJ = 25_C
0.01
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD Source-to-Drain Voltage (V)
Document Number: 72862
S-42139—Rev. B, 15-Nov-04
1.2
0.00
0
2468
VGS Gate-to-Source Voltage (V)
10
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3
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