SI4532CDY

www.DataSheet.co.kr Si4532CDY Vishay Siliconix N- and P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 RDS(on) () 0.047 at VGS = 10 V 0.065 at VGS = 4.5 V 0.089 at VGS = - 10 V 0.140 at VGS = - 4.5 V ID (A)a 6.0 5.2 - 4.3 - 3.4 Qg (Typ.) 2.75 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC P-Channel - 30 4.1 APPLICATIONS SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4532CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D1 D1 D2 D2 D1 S2 DC/DC Converter Load Switch G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 °C TA = 25 °C IDM IS ISM IAS EAS ID Symbol VDS VGS 6.0 4.9 4.9b, c 3.9b, c 24 2.3 1.5b, c 24 7 2.5 2.78 1.78 1.78b, c 1.14b, c - 55 to 150 N-Channel 30 ± 20 - 4.3 - 3.4 - 3.4b, c - 2.7b, c - 15 - 2.3 - 1.5b, c - 12 8 3.2 2.78 1.78 1.78b, c 1.14b, c °C W mJ A P-Channel - 30 Unit V THERMAL RESISTANCE RATIN...