SI4564DY

www.DataSheet.co.kr Si4564DY Vishay Siliconix N- and P-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 RDS(on) (Ω) 0.0175 at VGS = 10 V 0.020 at VGS = 4.5 V 0.021 at VGS = - 10 V 0.028 at VGS = - 4.5 V ID (A)a Qg (Typ.) 10 9.2 - 9.2 - 7.4 9.8 21.7 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook PCs D1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4564DY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D1 D1 D2 D2 G1 G2 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 °C TA = 25 °C IDM IS ISM IAS EAS ID Symbol VDS VGS N-Channel 40 ± 16 10 8 8.0 b, c b, c P-Channel - 40 ± 20 - 9.2 - 7.4 - 7.2b, c - 5.8b, c - 40 - 2.6 - 1.6b, c - 40 - 20 20 3.2 2.1 2b, c 1.28b, c Unit V 6.2 40 A 2.6 1.6b, c 40 10 5 3.1 2 2 b, c mJ W 1.28b, c - 55 to 150 °C THERMAL RESISTANCE RATINGS N-Channel Parameter Maximum Ju...