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N-Channel MOSFET. SI4712DY Datasheet

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N-Channel MOSFET. SI4712DY Datasheet






SI4712DY MOSFET. Datasheet pdf. Equivalent




SI4712DY MOSFET. Datasheet pdf. Equivalent





Part

SI4712DY

Description

N-Channel MOSFET



Feature


www.DataSheet.co.kr New Product Si4712 DY Vishay Siliconix N-Channel 30-V (D- S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.013 a t VGS = 10 V 0.0165 at VGS = 4.5 V ID ( A)a 14.6 12.9 Qg (Typ.) 8.3 nC FEATURE S • Halogen-free According to IEC 612 49-2-21 Definition • SkyFET® Monolit hic TrenchFET® Power MOSFET and Schott ky Diode • 100 % Rg Teste.
Manufacture

Vishay

Datasheet
Download SI4712DY Datasheet


Vishay SI4712DY

SI4712DY; d • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4712DY-T1-GE3 (Lead (Pb )-free and Halogen-free) 8 7 6 5 D D D D G N-Channel MOSFET S Schottky Diode • Notebook System Power - Low Side D ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain- Source Voltage Gate-Sourc.


Vishay SI4712DY

e Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 14.6 11.6 10.3b, c 8.2b, c 50 4.5 2.3b, c 15 11.25 5 3.2 2.5b, c 1.6b, c - 55 to 150 Unit V Pulsed Drain Curre nt Continuous Source-Drain Dio.


Vishay SI4712DY

de Current Single Pulse Avalanche Curren t Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operatin g Junction and Storage Temperature Rang e °C THERMAL RESISTANCE RATINGS Para meter Maximum Junction-to-Ambientb, d M aximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mou nted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under St.

Part

SI4712DY

Description

N-Channel MOSFET



Feature


www.DataSheet.co.kr New Product Si4712 DY Vishay Siliconix N-Channel 30-V (D- S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.013 a t VGS = 10 V 0.0165 at VGS = 4.5 V ID ( A)a 14.6 12.9 Qg (Typ.) 8.3 nC FEATURE S • Halogen-free According to IEC 612 49-2-21 Definition • SkyFET® Monolit hic TrenchFET® Power MOSFET and Schott ky Diode • 100 % Rg Teste.
Manufacture

Vishay

Datasheet
Download SI4712DY Datasheet




 SI4712DY
www.DataSheet.co.kr
New Product
Si4712DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.013 at VGS = 10 V
0.0165 at VGS = 4.5 V
ID (A)a
14.6
12.9
Qg (Typ.)
8.3 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4712DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET® Monolithic TrenchFET® Power
MOSFET and Schottky Diode
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
- Low Side
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
14.6
11.6
10.3b, c
8.2b, c
50
4.5
2.3b, c
15
11.25
5
3.2
2.5b, c
1.6b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typ.
38
20
Max.
50
25
Unit
°C/W
Document Number: 65170
S09-1814-Rev. A, 14-Sep-09
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/




 SI4712DY
www.DataSheet.co.kr
Si4712DY
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID= 1 mA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
On -State Drain Currenta
ID(on)
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 10 A
Forward Transconductancea
gfs VDS = 15 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 1 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
30
1.2
30
0.3
Typ.
Max.
0.028
2
2.5
± 100
0.2
20
0.0105
0.013
37
0.013
0.0165
1084
200
77
18.5
8.3
2.8
2.0
1.2
16
18
15
10
8
11
17
9
28
12.5
2.4
30
35
30
20
16
22
34
18
0.48
17
7
10
7
4.5
50
0.65
34
14
Unit
V
nA
mA
A
Ω
S
pF
nC
Ω
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 65170
S09-1814-Rev. A, 14-Sep-09
Datasheet pdf - http://www.DataSheet4U.net/




 SI4712DY
www.DataSheet.co.kr
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 10
VGS = 10 V thru 4 V
40
8
Si4712DY
Vishay Siliconix
30 6
20
VGS = 3 V
10
0
0.0
0.0165
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
4
2
0
0
1500
TC = 25 °C
TC = 125 °C
TC = - 55 °C
1234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
0.0150
0.0135
VGS = 4.5 V
1200
900
Ciss
0.0120
0.0105
VGS = 10 V
0.0090
0
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 10 A
8
VDS = 10 V
6
VDS = 20 V
4 VDS = 15 V
50
2
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
Gate Charge
600
300 Coss
Crss
0
0
5
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 15 A
1.6
30
1.4 VGS = 10 V
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65170
S09-1814-Rev. A, 14-Sep-09
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/






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