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N-Channel MOSFET. SI4714DY Datasheet

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N-Channel MOSFET. SI4714DY Datasheet






SI4714DY MOSFET. Datasheet pdf. Equivalent




SI4714DY MOSFET. Datasheet pdf. Equivalent





Part

SI4714DY

Description

N-Channel MOSFET

Manufacture

Vishay

Datasheet
Download SI4714DY Datasheet


Vishay SI4714DY

SI4714DY; www.DataSheet.co.kr New Product Si4714 DY Vishay Siliconix N-Channel 30 V (D- S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) ( ) 0.0135 at VGS = 10 V 0.0175 at VGS = 4.5 V ID (A)a 13.6 7.3 nC 12.0 Qg (Typ. ) • Halogen-free According to IEC 61 249-2-21 Definition • SkyFET Mo nolithic TrenchFET Gen.  Power MOSFET and Schottky Diode • 100.


Vishay SI4714DY

% Rg Tested • 100 % UIS Tested • Co mpliant to RoHS Directive 2002/95/EC S O-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D APPLICATIONS • Notebook PC - S ystem Power, Memory • Buck Converter • Synchronous Rectifier Switch D G Schottky Diode Ordering Information: S i4714DY-T1-GE3 (Lead (Pb)-free and Halo gen-free) N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C.


Vishay SI4714DY

, unless otherwise noted) Parameter Drai n-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 s) Continuous Source-Drain Diode Curre nt Single Pulse Avalanche Current Singl e Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximu m Power Dissipation TC = 70.



Part

SI4714DY

Description

N-Channel MOSFET

Manufacture

Vishay

Datasheet
Download SI4714DY Datasheet




 SI4714DY
www.DataSheet.co.kr
New Product
Si4714DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0135 at VGS = 10 V
30
0.0175 at VGS = 4.5 V
ID (A)a
13.6
12.0
Qg (Typ.)
7.3 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET Monolithic TrenchFET Gen. 
Power MOSFET and Schottky Diode
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System Power, Memory
• Buck Converter
• Synchronous Rectifier Switch
D
Top View
Ordering Information:
Si4714DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typ.
38
22
Limit
30
± 20
13.6
10.7
10.1b, c
8.1b, c
50
3.8
2.1b, c
15
11.25
4.5
2.8
2.5b, c
1.6b, c
- 55 to 150
Max.
50
28
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 67942
www.vishay.com
S11-1180-Rev. A, 13-Jun-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/





 SI4714DY
www.DataSheet.co.kr
Si4714DY
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID= 1 mA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On -State Drain Currenta
IDSS
ID(on)
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 100 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 10 A
Forward Transconductancea
gfs VDS = 15 V, ID = 15 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge
Gate-Drain Charge
Qgs VDS = 15 V, VGS = 4.5 V, ID = 10 A
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 4.5 V, Rg = 1
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 1.5
ID 10 A, VGEN = 10 V, Rg = 1
Fall Time
tf
Drain-Source Body Diode and Schottky Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD IS = 1 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
30
1
30
0.3
Typ.
Max.
Unit
0.017
1
2.3
± 100
0.150
10
0.0110
0.0145
25
0.0135
0.0175
V
nA
mA
A
S
722
194
64
16.3 24.5
7.3 11
2.2
2
1.1 2.2
9 18
18 35
10 20
10 20
7 14
11 22
14 28
9 18
0.42
14.5
5
7.5
7
3.8
50
0.53
29
10
pF
nC
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
Document Number: 67942
2 S11-1180-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/





 SI4714DY
www.DataSheet.co.kr
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
VGS = 10 V thru 4 V
40
10
8
Si4714DY
Vishay Siliconix
30 6
20
10
00
0.022
VGS = 3 V
VGS = 2 V
0.5 1 1.5 2
VDS - Drain-to-Source Voltage (V)
2.5
Output Characteristics
4
TC = 25 °C
2
TC = 125 °C
TC = - 55 °C
0
01234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1000
5
0.019
0.016
VGS = 4.5 V
800 Ciss
600
0.013
0.010
VGS = 10 V
0.007
0
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
50
10
ID = 10 A
8
VDS = 15 V
6
VDS = 10 V
4
VDS = 20 V
2
0
0 3.4 6.8 10.2 13.6 17.0
Qg - Total Gate Charge (nC)
Gate Charge
400
200 Crss
Coss
0
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 15 A
1.6
1.4
VGS = 10 V
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67942
www.vishay.com
S11-1180-Rev. A, 13-Jun-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/



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