SI4622DY

www.DataSheet.co.kr New Product Si4622DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 Channel-2 30 30 RDS(on) (Ω) 0.0160 at VGS = 10 V 0.0186 at VGS = 4.5 V 0.0264 at VGS = 10 V 0.0290 at VGS = 4.5 V ID (A)a Qg (Typ.) 8.0e 8.0e 8.0e 8.0e 19 6 FEATURES Halogen-free According to IEC 61249-2-21 Definition SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook Logic DC-DC Low Current DC-DC SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4622DY-T1-E3 (Lead (Pb)-free) Si4622DY-T1-GE3 (Lead (Pb)-free and Halogen-free) 8 7 6 5 D1 D1 D2 D2 S1 N-Channel MOSFET S2 N-Channel MOSFET G1 Schottky Diode G2 D1 D2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Channel-1 30 ± 20 8e 8e 8b, c, e 7.2b, c 60 2.8 1.8b, c 25 31.2 3.3 2.1 2.2b, c 1.4b, c - 55 to 150 Channel-2 30 ± 16 8e 6.7 6.7b, c 5.3b, c 30 2.6 1.7b, c 15 11.2 3.1 2.0 2.0b, c 1.3b, c Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storag...