J681

www.DataSheet4U.com www.DataSheet.co.kr 2SJ681 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII) 2SJ681 Relay Drive, DC−DC Converter and Motor Drive Applications ６．５±０．２ ５．２±０．２ １．５±０．２ Unit: mm ０．６ MAX． z High forward transfer admittance: |Yfs| = 5.0 S (typ.) z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) １．６ z Low drain−source ON resistance: RDS (ON) = 0.12 Ω (typ.) ０．９ ５．５±０．２ z 4-V gate drive １．１±０．２ ４．１±０．２ ５．７ ０．６ MAX ２．３ ２．３ ２．３±０．２ ０．６±０．１５ ０．６±０．１５ １ ２ ３ Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalenche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −60 −60 ±20 −5 −20 20 40.5 −5 2 150 −55~150 Unit V V V A A W mJ A mJ °C °C ０．８ MAX． １．1 MAX． Pulse(Note 1) JEDEC JEITA TOSHIBA ― ― 2-7J2B Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.25 125 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating: pulse width limited by maximum chan...