P30NF10

www.DataSheet.co.kr STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STB30NF10 STP30NF10 STP30NF10FP s s s s VDSS 100 V 100 V 100 V RDS(on) <0.045 Ω <0.045 Ω <0.045 Ω ID 35 A 35 A 18 A 3 1 2 s TYPICAL RDS(on) = 0.038 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) 3 1 TO-220FP D2PAK TO-263 (Suffix “T4”) 3 1 2 TO-220 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter INTERNAL SCHEMATIC DIAGRAM Value STB30NF10 STP30NF10 STP30NF10FP 100 100 ± 20 35 25 140 115 0.77 28 275 ------55 to 175 2000 18 13 72 30 0.2 Unit VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Aval...