RT3P66M

www.DataSheet.co.kr PRELIMINARY RT3P66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3P66M is a composite transistor built with RT1P430 chip and RT1P430 chip in SC-88 package. OUTLINE DRAWING 2.1 1.25 ‡@ 0.65 ‡A ‡B ‡E ‡D ‡C 0.2 Unit F mm FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting 2.0 APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit 0.65 0.13 0`0.1 ‡E RTr1 ‡D R1 R2 RTr2 ‡C R1 ‡A TERMINAL CONNECTOR ‡@ F EMITTER1 ‡A F BASE1 ‡B F COLLECTOR2 ‡C F EMITTER2 ‡D F BASE2 ‡E :COLLECTOR1 JEITAF SC-88 0.9 ‡@ 0.65 ‡B MAXIMUM RATING (Ta=25 Ž) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation iTotal, Ta=25 Ž j Junction temperature Storage temperature RATING -50 -6 -50 -100 -200 150 {150 -55`{ 150 UNIT V V V mA mA mW Ž Ž ‡E ‡D ‡C MARKING . T 6 6 ‡@ ‡A ‡B ISAHAYA ELECTRONICS CORPORATION Datasheet pdf - http://www.DataSheet4U.net/ w w w . D a t a S h e e t . c o . k r PRELIMINARY RT3P66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25 ) Symbol V(BR)CEO ICBO hFE VCE(sat) R1 fT Parameter Collector to Emitter break down voltage Collector cut off current DC forward current gain Collector to Emitter saturat...