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SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
TO-220AB TO-220 FULLPAK
FEATURES
560 V VGS = 10 V 48 12 15 Single
D
• Low Figure-of-Merit Ron x Qg
0.555
• 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC
G
D
S GD S
D2PAK
(TO-263)
G
S
G D S
N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free TO-220AB SiHP12N50C-E3 D2PAK (TO-263) SiHB12N50C-E3 TO-220 FULLPAK SiHF12N50C-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
LIMIT PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc Linear Derating Factor Single Pulse Avalanche Energyb EAS PD TJ, Tstg for 10 s 208 - 55 to + 150 300 Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d VGS at 10 V TC = 25 °C TC = 100 °C TO220-AB SYMBOL D2PAK (TO-263) VDS VGS ID IDM 1.67 180 36 500 ± 30 12 7.5 28 0.28 W/°C mJ W °C A TO-220 FULLPAK UNIT V
Notes a. Limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 12 A. c. Repetitive rating; pulse width limited by maximum junction temperature. d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 www.vishay.com 1
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SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Junction-to-Ambient (PCB mount)a SYMBOL RthJA RthJC RthJA TO220-AB D2PAK (TO-263) 62 0.6 40 TO-220 FULLPAK 65 3.5 °C/W UNIT
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Input Resistance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Current IS ISM VSD trr Qrr IRRM TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 20 V MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Rg
VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 4 A VDS = 50 V, ID = 3 A
500 3.0 -
0.6 0.46 3
5.0 ± 100 50 250 0.555 -
V V/°C V nA μA Ω S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz
-
1375 165 17 32 12 15 18 35 23 6 1.1
48 Ω ns nC pF
VGS = 10 V
ID = 10 A, VDS = 400 V
-
VDD = 250 V, ID = 10 A Rg = 4.3 Ω, VGS = 10 V
-
f = 1 MHz, open drain
-
-
580 4.3 13
12 A 28 1.8 V ns μC A
G
S
TJ = 25 °C, IS = 10 A, VGS = 0 V
Note • The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products.
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Document Number: 91388 S10-0969-Rev. B, 26-Apr-10
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
VGS TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V
35
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TJ = 25 °C
25 20 15 10 5 0 0
30 25 20 15 10 5 0
TJ = 25 °C
TJ = 150 °C
7.0 V
5
10
15
20
25
30
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics (TO-220)
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On-Resistance (Normalized)
18
VGS
TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V
3 ID = 12 A 2.5 2 1.5 1 0.5 VGS = 10 V 0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
ID, Drain-to-Source Current (A)
TJ = 150 °C
15 12 9 6 3 0 0
7.0 V
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics (TO-220)
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91388 S10-0969-Rev. B, 26-Apr-10
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