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Power MOSFET. SIHP12N50C Datasheet

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Power MOSFET. SIHP12N50C Datasheet






SIHP12N50C MOSFET. Datasheet pdf. Equivalent




SIHP12N50C MOSFET. Datasheet pdf. Equivalent





Part

SIHP12N50C

Description

Power MOSFET

Manufacture

Vishay Siliconix

Datasheet
Download SIHP12N50C Datasheet


Vishay Siliconix SIHP12N50C

SIHP12N50C; www.DataSheet.co.kr SiHP12N50C, SiHB12N 50C, SiHF12N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ m ax. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC ) Qgd (nC) Configuration TO-220AB TO-22 0 FULLPAK FEATURES 560 V VGS = 10 V 48 12 15 Single D • Low Figure-of-Meri t Ron x Qg 0.555 • 100 % Avalanche T ested • Gate Charge Improved • Trr/ Qrr Improved • Compliant to.


Vishay Siliconix SIHP12N50C

RoHS Directive 2002/95/EC G D S GD S D2PAK (TO-263) G S G D S N-Channe l MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-220AB SiHP12N50C-E3 D 2PAK (TO-263) SiHB12N50C-E3 TO-220 FULL PAK SiHF12N50C-E3 ABSOLUTE MAXIMUM RAT INGS (TC = 25 °C, unless otherwise not ed) LIMIT PARAMETER Drain-Source Voltag e Gate-Source Voltage Continuous Drain Current (TJ = 150 °.


Vishay Siliconix SIHP12N50C

C)a Pulsed Drain Currentc Linear Deratin g Factor Single Pulse Avalanche Energyb EAS PD TJ, Tstg for 10 s 208 - 55 to + 150 300 Maximum Power Dissipation Oper ating Junction and Storage Temperature Range Soldering Recommendations (Peak T emperature)d VGS at 10 V TC = 25 °C TC = 100 °C TO220-AB SYMBOL D2PAK (TO-26 3) VDS VGS ID IDM 1.67 180 36 500 ± 30 12 7.5 28 0.28 W/°C .



Part

SIHP12N50C

Description

Power MOSFET

Manufacture

Vishay Siliconix

Datasheet
Download SIHP12N50C Datasheet




 SIHP12N50C
www.DataSheet.co.kr
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
560 V
VGS = 10 V
48
12
15
Single
TO-220AB
TO-220 FULLPAK
0.555
D
FEATURES
• Low Figure-of-Merit Ron x Qg
• 100 % Avalanche Tested
• Gate Charge Improved
• Trr/Qrr Improved
• Compliant to RoHS Directive 2002/95/EC
S
D
G
D2PAK (TO-263)
GDS
G
GD
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP12N50C-E3
D2PAK (TO-263)
SiHB12N50C-E3
TO-220 FULLPAK
SiHF12N50C-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
LIMIT
PARAMETER
TO220-AB
SYMBOL D2PAK (TO-263)
TO-220
FULLPAK
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Currentc
VGS at 10 V
TC = 25 °C
TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
VDS
VGS
ID
IDM
EAS
PD
TJ, Tstg
500
± 30
12
7.5
28
1.67 0.28
180
208 36
- 55 to + 150
300
Notes
a. Limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 12 A.
c. Repetitive rating; pulse width limited by maximum junction temperature.
d. 1.6 mm from case.
UNIT
V
A
W/°C
mJ
W
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/





 SIHP12N50C
www.DataSheet.co.kr
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL TO220-AB D2PAK (TO-263)
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Junction-to-Ambient (PCB mount)a
RthJA
RthJC
RthJA
62
0.6
40
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TO-220 FULLPAK
65
3.5
-
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 4 A
VDS = 50 V, ID = 3 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
VGS = 10 V
ID = 10 A, VDS = 400 V
VDD = 250 V, ID = 10 A
Rg = 4.3 Ω, VGS = 10 V
f = 1 MHz, open drain
MIN.
500
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.6
-
-
-
-
0.46
3
1375
165
17
32
12
15
18
35
23
6
1.1
MAX. UNIT
-
-
5.0
± 100
50
250
0.555
-
V
V/°C
V
nA
μA
Ω
S
-
- pF
-
48
- nC
-
-
-
ns
-
-
-Ω
Continuous Source-Drain Diode Current IS MOSFET symbol
showing the
Pulsed Diode Forward Current
integral reverse
ISM p - n junction diode
D
G
S
- - 12
A
- - 28
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 10 A, VGS = 0 V
TJ = 25 °C, IF = IS, dI/dt = 100 A/μs,
VR = 20 V
- - 1.8 V
- 580 -
ns
- 4.3 - μC
- 13 -
A
Note
• The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to
produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell
such products.
www.vishay.com
2
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
Datasheet pdf - http://www.DataSheet4U.net/





 SIHP12N50C
www.DataSheet.co.kr
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30 VGS
TOP
15 V
14 V
25 13 V
12 V
11 V
10 V
20 9.0 V
8.0 V
7.0 V
6.0 V
15 BOTTOM 5.0 V
TJ = 25 °C
10
5 7.0 V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics (TO-220)
35
30 TJ = 25 °C
25
20 TJ = 150 °C
15
10
5
0
0 5 10 15 20 25
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
18
VGS
TOP
15 V
15
14 V
13 V
12 V
11 V
12
10 V
9.0 V
8.0 V
7.0 V
9
6.0 V
BOTTOM 5.0 V
6
TJ = 150 °C
7.0 V
3
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics (TO-220)
3
ID = 12 A
2.5
2
1.5
1
0.5
VGS = 10 V
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91388
S10-0969-Rev. B, 26-Apr-10
www.vishay.com
3
Datasheet pdf - http://www.DataSheet4U.net/



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