SIHB12N50C

www.DataSheet.co.kr SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration TO-220AB TO-220 FULLPAK FEATURES 560 V VGS = 10 V 48 12 15 Single D Low Figure-of-Merit Ron x Qg 0.555 100 % Avalanche Tested Gate Charge Improved Trr/Qrr Improved Compliant to RoHS Directive 2002/95/EC G D S GD S D2PAK (TO-263) G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-220AB SiHP12N50C-E3 D2PAK (TO-263) SiHB12N50C-E3 TO-220 FULLPAK SiHF12N50C-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) LIMIT PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc Linear Derating Factor Single Pulse Avalanche Energyb EAS PD TJ, Tstg for 10 s 208 - 55 to + 150 300 Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d VGS at 10 V TC = 25 °C TC = 100 °C TO220-AB SYMBOL D2PAK (TO-263) VDS VGS ID IDM 1.67 180 36 500 ± 30 12 7.5 28 0.28 W/°C mJ W °C A TO-220 FULLPAK UNIT V Notes a. Limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 12 A. c. Repetitive rating; pulse width limited by maximum junction temperature. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 www.vishay.com ...