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FTP08N50 Dataheets PDF



Part Number FTP08N50
Manufacturers ARK
Logo ARK
Description MOSFET
Datasheet FTP08N50 DatasheetFTP08N50 Datasheet (PDF)

www.DataSheet.co.kr FTP08N50/FTA08N50 500V N MOS ¾ ¾ ¾ ¾ ¾ (33nC) 100% RoHS/ BVDSS 500V RDS(ON) (Max.) 0.9Ω ID 8.0A ¾ ¾ ¾ ¾ / FTP08N50 FTA08N50 TO-220 TO-220F FTP08N50 FTA08N50 ,TC=25℃ VDSS ID ID@100℃ IDM PD VGS EAS dv/dt TL TJ TSTG [1] - (TC=25℃) (TC=100℃) [2] (TC=25℃) (TC﹥25℃) - L=7mH, ID=8.0A dv/dt[3] (1.6mm,10) FTP08N50 500 8.0 FTA08N50 8.0* V A Figure 3 Figure 6 125 1.0 ±30 220 4.5 300 31 0.25 W W/℃ V mJ V/ns ℃ -55 to 150 *。 :“”,。 RθJC RθJA - - FTP08.

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www.DataSheet.co.kr FTP08N50/FTA08N50 500V N MOS ¾ ¾ ¾ ¾ ¾ (33nC) 100% RoHS/ BVDSS 500V RDS(ON) (Max.) 0.9Ω ID 8.0A ¾ ¾ ¾ ¾ / FTP08N50 FTA08N50 TO-220 TO-220F FTP08N50 FTA08N50 ,TC=25℃ VDSS ID ID@100℃ IDM PD VGS EAS dv/dt TL TJ TSTG [1] - (TC=25℃) (TC=100℃) [2] (TC=25℃) (TC﹥25℃) - L=7mH, ID=8.0A dv/dt[3] (1.6mm,10) FTP08N50 500 8.0 FTA08N50 8.0* V A Figure 3 Figure 6 125 1.0 ±30 220 4.5 300 31 0.25 W W/℃ V mJ V/ns ℃ -55 to 150 *。 :“”,。 RθJC RθJA - - FTP08N50 1.0 60 FTA08N50 4.0 60 ℃/W www.ark-micro.com 1/11 2009.03 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FTP08N50/FTA08N50 BVDSS △BVDSS/△TJ IDSS IGSS - 500 --- --- -0.6 ---- --12 100 100 -100 µA ,TC=25℃ V V/℃ VGS=0V, ID=250µA 25℃, ID=250µA VDS=500V, VGS=0V VDS=400V, VGS=0V, TC=125℃ VGS=+30V VGS=-30V - nA RDS(ON) VGS(TH) gfs - -2.0 - 0.75 -7.9 0.9 4.0 -- , TC=25℃ Ω V S VGS=10V, ID=4.8A[4] VDS = VGS, ID=250µA VDS =15V, ID=8.0A[4] CISS COSS CRSS QG QGS QGD - -() ------ 1110 101 21 33 3.2 12.5 ------nC pF VGS=0V VDS=25V f=1.0MHZ Figure 14 VDD=250V ID=8.0A Figure 15 td(ON) trise td(OFF) tfall ---- 31 72 74 51 ---- VDD=250V ID=8.0A VGS=10V RG=20Ω ns www.ark-micro.com 2/11 2009.03 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FTP08N50/FTA08N50 ISD ISM VSD trr Qrr ----- ---320 1980 8.0 32 1.2 --, TC=25℃ A A V ns nC Integral P-N diode in MOSFET IS=8.0A, VGS=0V VGS=0V IF=8.0 A,di/dt=100A/µs : [1] TJ=+25℃ to +150℃ [2] , [3] ISD=8.0A, di/dt≤100A/µs, VDD≤BVDSS, TJ=+150℃ [4] ≤380µs; ≤2%. www.ark-micro.com 3/11 2009.03 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FTP08N50/FTA08N50 Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case 1 Impedance(Normalized) 50% 20% 10% 5% 2% 1% single pulse ZθJC, Thermal 0.1 0.01 0.001 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tP, Rectangular Pulse Duration(s) 1.0E+00 1.0E+01 140 120 PD, Power Dissipation (W) Figure 2. Maximum Power Dissipation vs. Case Temperature 9.0 8.0 ID, Drain Current (A) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TC, Case Temperature (℃) 150 25 Figure 3. Maximum Continuous Drain Current vs Case Temperature 100 80 60 40 20 0 50 75 100 125 TC, Case Temperature (℃) 150 Figure 4. Typical Output Characteristics 35 30 ID, Drain Current(A) 25 20 15 10 5 0 0 10 20 30 40 VDS, Drain-to-Source Voltage(V) VGS=5.5V VGS=15V VGS=10 V VGS=6.5V 3 Figure 5. Typical Drain-to-Source ON Resistance vs. Gate Voltage and Drain Current RDS(ON), Drain-to-Source ON 2.5 Resistance(Ohm) ID=4A 2 ID=8A 1.5 VGS=5.0V VGS=4.5V VGS=4.0V 1 0.5 4 6 8 10 12 14 16 VGS, Gate-to-Source Voltage(V) 18 20 50 www.ark-micro.com 4/11 2009.03 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FTP08N50/FTA08N50 Figure 6. Maximum Peak Current Capability 100 IDM, Peak Current(A) Transconductance may limit current in this region 10 1 0.00001 0.0001 0.001 0.01 tP, Pulse Width(s) 0.1 1 10 Figure 7. Typical Transfer Characteristics 25 ID, Drain-to-Source Current (A) 20 25℃ -55℃ Figure 8. Unclamped Inductive Switching Capability 100 IAS, Avalanche Current(A) 10 15 10 Starting TJ=25 ℃ Starting TJ=150 ℃ 150 ℃ 1 5 0 3 4 5 6 7 VGS, Gate-to-Source Voltage,(V) 8 0.1 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 tAV, Time in Avalanche(s) 1.E-01 Figure 9. Typical Drain-to-Source ON Resistance 1.1 RDS(ON), Drain-to-Source Resistance 2.4 2.2 2.0 1.8 (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 5 10 ID , Drain Current(A) 15 20 Figure 10. Typical Drain-to-Source On Resistance vs. Junction Temperature RDS(ON), Drain-to-Source ON 1 Resistance(Ohm) 0.9 VGS=10V VGS=20V 0.8 0.7 0.6 -75 -50 -25 0 25 50 75 100 TJ , Junction Temperature (℃) 125 150 www.ark-micro.com 5/11 2009.03 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr FTP08N50/FTA08N50 Figure 11.Typical Breakdown Voltage vs. Junction Temperature 1.20 Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 TJ , Junction Temperature (℃) 125 150 1.3 1.2 VGS(TH) Threshold Voltage 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 TJ , Junction Temperature (℃) 125 150 Figure 12.Typical Threshold Voltage vs. Junction Temperature BVDSS, Drain-to-Source Figure 13. Maximum Forward Safe Operation Area 100 10000 (Normalized) Figure 14. Typical Capacitance vs. Drain-to-Source Voltage 10us ID, Drain Current(A) 10 100us C, Capacitance(pF) 1000 CISS 1ms 100 COSS 1 Operating in this area may be limited by RDS(ON) 10ms DC 10 CRSS 0.1 10 100 VDS, Drain-to-Source Voltage(V) 1000 1 0.01 0.1 1 10 VDS, Drain Voltage(V) 100 1000 12 VGS. Gate-to-Source Voltage(V) 10 8 6 4 2 0 Figure 15. Typical Gate Charge vs. Gate-to-Source Voltage 60 ISD, Reverse Drain Current(A) 50 40 30 20 10 0 0.25 Figure 16. Typical Body Diode Transfer Characteristics 150 ℃ 25℃ -55℃ 0 5 10 15 20 25 QG, Gate Charge(nC) 30 35.


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