Document
www.DataSheet.co.kr
FTP08N50/FTA08N50
500V N MOS
¾ ¾ ¾ ¾ ¾ (33nC) 100% RoHS/
BVDSS 500V
RDS(ON) (Max.) 0.9Ω
ID 8.0A
¾ ¾ ¾ ¾ /
FTP08N50 FTA08N50
TO-220 TO-220F
FTP08N50 FTA08N50
,TC=25℃
VDSS ID ID@100℃ IDM PD VGS EAS dv/dt TL TJ TSTG
[1]
- (TC=25℃) (TC=100℃) [2] (TC=25℃) (TC﹥25℃) - L=7mH, ID=8.0A dv/dt[3] (1.6mm,10)
FTP08N50 500 8.0
FTA08N50 8.0*
V A
Figure 3 Figure 6 125 1.0 ±30 220 4.5 300 31 0.25
W W/℃ V mJ V/ns ℃
-55 to 150
*。 :“”,。
RθJC RθJA - - FTP08N50 1.0 60 FTA08N50 4.0 60 ℃/W
www.ark-micro.com 1/11
2009.03
Datasheet
pdf
-
http://www.DataSheet4U.net/
www.DataSheet.co.kr
FTP08N50/FTA08N50
BVDSS △BVDSS/△TJ IDSS IGSS - 500 --- --- -0.6 ---- --12 100 100 -100 µA
,TC=25℃
V V/℃
VGS=0V, ID=250µA 25℃, ID=250µA VDS=500V, VGS=0V VDS=400V, VGS=0V, TC=125℃ VGS=+30V VGS=-30V
-
nA
RDS(ON) VGS(TH) gfs - -2.0 - 0.75 -7.9 0.9 4.0 --
, TC=25℃
Ω V S
VGS=10V, ID=4.8A[4] VDS = VGS, ID=250µA VDS =15V, ID=8.0A[4]
CISS COSS CRSS QG QGS QGD - -() ------ 1110 101 21 33 3.2 12.5 ------nC pF
VGS=0V VDS=25V f=1.0MHZ Figure 14 VDD=250V ID=8.0A Figure 15
td(ON) trise td(OFF) tfall ---- 31 72 74 51 ----
VDD=250V ID=8.0A VGS=10V RG=20Ω
ns
www.ark-micro.com 2/11
2009.03
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
FTP08N50/FTA08N50
ISD ISM VSD trr Qrr ----- ---320 1980 8.0 32 1.2 --, TC=25℃
A A V ns nC
Integral P-N diode in MOSFET IS=8.0A, VGS=0V VGS=0V IF=8.0 A,di/dt=100A/µs
: [1] TJ=+25℃ to +150℃ [2] , [3] ISD=8.0A, di/dt≤100A/µs, VDD≤BVDSS, TJ=+150℃ [4] ≤380µs; ≤2%.
www.ark-micro.com 3/11
2009.03
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
FTP08N50/FTA08N50
Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case 1 Impedance(Normalized)
50% 20% 10% 5% 2% 1% single pulse
ZθJC, Thermal
0.1
0.01
0.001 1.0E-06
1.0E-05
1.0E-04
1.0E-03 1.0E-02 1.0E-01 tP, Rectangular Pulse Duration(s)
1.0E+00
1.0E+01
140 120 PD, Power Dissipation (W)
Figure 2. Maximum Power Dissipation vs. Case Temperature 9.0 8.0 ID, Drain Current (A) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 25 50 75 100 125 TC, Case Temperature (℃) 150 25
Figure 3. Maximum Continuous Drain Current vs Case Temperature
100 80 60 40 20 0
50
75 100 125 TC, Case Temperature (℃)
150
Figure 4. Typical Output Characteristics 35 30 ID, Drain Current(A) 25 20 15 10 5 0 0 10 20 30 40 VDS, Drain-to-Source Voltage(V)
VGS=5.5V VGS=15V VGS=10 V VGS=6.5V
3
Figure 5. Typical Drain-to-Source ON Resistance vs. Gate Voltage and Drain Current
RDS(ON), Drain-to-Source ON
2.5 Resistance(Ohm)
ID=4A
2
ID=8A
1.5
VGS=5.0V VGS=4.5V VGS=4.0V
1
0.5 4 6 8 10 12 14 16 VGS, Gate-to-Source Voltage(V) 18 20
50
www.ark-micro.com 4/11
2009.03
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
FTP08N50/FTA08N50
Figure 6. Maximum Peak Current Capability 100 IDM, Peak Current(A)
Transconductance may limit current in this region
10
1 0.00001
0.0001
0.001
0.01 tP, Pulse Width(s)
0.1
1
10
Figure 7. Typical Transfer Characteristics 25 ID, Drain-to-Source Current (A) 20
25℃ -55℃
Figure 8. Unclamped Inductive Switching Capability 100
IAS, Avalanche Current(A)
10
15 10
Starting TJ=25 ℃
Starting TJ=150 ℃
150 ℃
1
5 0 3 4 5 6 7 VGS, Gate-to-Source Voltage,(V) 8
0.1 1.E-06
1.E-05
1.E-04 1.E-03 1.E-02 tAV, Time in Avalanche(s)
1.E-01
Figure 9. Typical Drain-to-Source ON Resistance
1.1 RDS(ON), Drain-to-Source Resistance 2.4 2.2 2.0 1.8 (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 5 10 ID , Drain Current(A) 15 20
Figure 10. Typical Drain-to-Source On Resistance vs. Junction Temperature
RDS(ON), Drain-to-Source ON
1 Resistance(Ohm)
0.9
VGS=10V VGS=20V
0.8
0.7
0.6
-75
-50
-25 0 25 50 75 100 TJ , Junction Temperature (℃)
125
150
www.ark-micro.com 5/11
2009.03
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
FTP08N50/FTA08N50
Figure 11.Typical Breakdown Voltage vs. Junction Temperature
1.20 Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 TJ , Junction Temperature (℃) 125 150 1.3 1.2 VGS(TH) Threshold Voltage 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 TJ , Junction Temperature (℃) 125 150
Figure 12.Typical Threshold Voltage vs. Junction Temperature
BVDSS, Drain-to-Source
Figure 13. Maximum Forward Safe Operation Area 100 10000
(Normalized)
Figure 14. Typical Capacitance vs. Drain-to-Source Voltage
10us
ID, Drain Current(A)
10
100us
C, Capacitance(pF)
1000
CISS
1ms
100
COSS
1
Operating in this area may be limited by RDS(ON)
10ms DC
10
CRSS
0.1 10 100 VDS, Drain-to-Source Voltage(V) 1000
1 0.01
0.1
1 10 VDS, Drain Voltage(V)
100
1000
12 VGS. Gate-to-Source Voltage(V) 10 8 6 4 2 0
Figure 15. Typical Gate Charge vs. Gate-to-Source Voltage
60 ISD, Reverse Drain Current(A) 50 40 30 20 10 0 0.25
Figure 16. Typical Body Diode Transfer Characteristics
150 ℃ 25℃ -55℃
0
5
10
15 20 25 QG, Gate Charge(nC)
30
35.