Q67040-S4407

www.DataSheet.co.kr Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 VDS @ Tjmax RDS(on) ID 650 0.95 4.5 V Ω A Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance P-TO220-3-31 1 2 3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP04N60C3 SPB04N60C3 SPA04N60C3 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4366 Q67040-S4407 Marking 04N60C3 04N60C3 04N60C3 P-TO220-3-31 Q67040-S4413 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Symbol ID 4.5 2.8 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 13.5 130 0.4 4.5 ±20 ±30 50 Value SPP_B SPA Unit A 4.51) 2.81) 13.5 130 0.4 4.5 ±20 ±30 31 W °C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=3.4, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=4.5A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature -55...+150 Page 1 2003-10-02 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Final data Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 4.5 A, Tj = 125 °C SPP04N60C3, SPB04N60C3 SPA04N60C3 Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter ...