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LIMITING DIODE. CMJ2000 Datasheet

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LIMITING DIODE. CMJ2000 Datasheet






CMJ2000 DIODE. Datasheet pdf. Equivalent




CMJ2000 DIODE. Datasheet pdf. Equivalent





Part

CMJ2000

Description

SURFACE MOUNT SILICON CURRENT LIMITING DIODE



Feature


CMJ0130 THRU CMJH220 SURFACE MOUNT SILIC ON CURRENT LIMITING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMJ0130 serie s devices are silicon field effect curr ent regulator diodes designed for appli cations requiring a constant current ov er a wide voltage range. These devices are manufactured in the epoxy molded, l ow profile SOD-123.
Manufacture

Central Semiconductor

Datasheet
Download CMJ2000 Datasheet


Central Semiconductor CMJ2000

CMJ2000; FL case. Special selections of IP (regul ator current) are available for critica l applications. SOD-123FL CASE MARKIN G: SEE MARKING CODES ON ELECTRICAL CHAR ACTERISTICS TABLE FEATURES: • High r eliability • Special selections avail able • Through hole devices availabl e MAXIMUM RATINGS: (TA=60°C) Peak Ope rating Voltage (CMJ0130 THRU CMJ5750) P eak Operating Voltage (CM.


Central Semiconductor CMJ2000

JH080 THRU CMJH220) Power Dissipation Op erating and Storage Junction Temperatur e Thermal Resistance SYMBOL POV POV PD TJ, Tstg ΘJA 100 50 500 -65 to +150 180 UNITS V V mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless othe rwise noted) Type CMJ0130 Regulator C urrent (Note 1) IP @ VT=25V MIN NOM MAX mA mA mA 0.05 0.13 0.21 Minimum Dynam ic Impedance ZT @ VT=2.


Central Semiconductor CMJ2000

5V Minimum Knee Impedance ZK @ VK=6.0V Maximum Limiting Voltage VL @ IL=0.8 x IP MIN Temperature Coefficient (Note 2) TC Marking Code MΩ kΩ V %/°C 6.0 2,000 0.6 +2.10 to +0.10 101 CMJ0 300 0.20 0.31 0.42 4.0 1,000 0.8 +0 .40 to -0.20 301 CMJ0500 0.40 0.515 0 .63 2.0 500 1.1 +0.15 to -0.25 501 CMJ0750 0.60 0.76 0.92 1.0 200 1.4 0.0 to -0.32 701 .

Part

CMJ2000

Description

SURFACE MOUNT SILICON CURRENT LIMITING DIODE



Feature


CMJ0130 THRU CMJH220 SURFACE MOUNT SILIC ON CURRENT LIMITING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMJ0130 serie s devices are silicon field effect curr ent regulator diodes designed for appli cations requiring a constant current ov er a wide voltage range. These devices are manufactured in the epoxy molded, l ow profile SOD-123.
Manufacture

Central Semiconductor

Datasheet
Download CMJ2000 Datasheet




 CMJ2000
CMJ0130
THRU
CMJH220
SURFACE MOUNT SILICON
CURRENT LIMITING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMJ0130 series
devices are silicon field effect current regulator
diodes designed for applications requiring a constant
current over a wide voltage range. These devices
are manufactured in the epoxy molded, low profile
SOD-123FL case. Special selections of IP (regulator
current) are available for critical applications.
SOD-123FL CASE
MARKING: SEE MARKING CODES ON ELECTRICAL
CHARACTERISTICS TABLE
FEATURES:
• High reliability
• Special selections available
• Through hole devices available
MAXIMUM RATINGS: (TA=60°C)
Peak Operating Voltage (CMJ0130 THRU CMJ5750)
Peak Operating Voltage (CMJH080 THRU CMJH220)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
POV
POV
PD
TJ, Tstg
ΘJA
100
50
500
-65 to +150
180
UNITS
V
V
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
Type
CMJ0130
Regulator
Current
(Note 1)
IP @ VT=25V
MIN NOM MAX
mA mA mA
0.05 0.13 0.21
Minimum
Dynamic
Impedance
ZT @ VT=25V
Minimum
Knee
Impedance
ZK @ VK=6.0V
Maximum
Limiting
Voltage
VL @ IL=0.8 x IP MIN
Temperature
Coefficient
(Note 2)
TC
Marking
Code
MΩ kΩ
V %/°C
6.0 2,000
0.6 +2.10 to +0.10 101
CMJ0300 0.20 0.31 0.42
4.0
1,000
0.8
+0.40 to -0.20
301
CMJ0500 0.40 0.515 0.63
2.0
500
1.1
+0.15 to -0.25
501
CMJ0750 0.60 0.76 0.92
1.0
200
1.4
0.0 to -0.32
701
CMJ1000 0.88 1.1 1.32
0.65
100
1.7
-0.10 to -0.37
102
CMJ1500 1.28 1.5 1.72
0.45
70
2.0
-0.13 to -0.40
152
CMJ2000 1.68 2.0 2.32
0.35
50
2.3
-0.15 to -0.42
202
CMJ2700 2.28 2.69
3.1
0.30
30
2.7
-0.18 to -0.45
272
CMJ3500 3.0 3.55 4.1
0.25
20
3.2
-0.20 to -0.47
352
CMJ4500 3.9 4.5 5.1
0.20
10
3.7
-0.22 to -0.50
452
CMJ5750 5.0 5.75 6.5
0.05
5.0
4.5
-0.25 to -0.53
562
CMJH080 6.56 8.2 9.84
0.32
15
3.1
-0.25 to -0.45
822
CMJH100 8.0 10 12
0.17
6.0
3.5
-0.25 to -0.45
103
CMJH120 9.6
12 14.4
0.08
3.0
3.8
-0.25 to -0.45
123
CMJH150 12 15 18
0.03
2.0
4.3
-0.25 to -0.45
153
CMJH180 16 18 20
CMJH220 20 22.5 25
0.02
0.01
1.8
1.6
4.6
-0.25 to -0.45
183
5.3
-0.25 to -0.45
223
Notes: 1) Pulsed Method: Pulse Width (ms) = 27.5 divided by IP NOM (mA)
2) The Temperature Coefficient is measured between + 25°C and +50°C.
R6 (24-July 2019)




 CMJ2000
CMJ0130
THRU
CMJH220
SURFACE MOUNT SILICON
CURRENT LIMITING DIODES
SOD-123FL CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Cathode
2) Anode
MARKING: SEE ELECTRICAL
CHARACTERISTICS TABLE
w w w. c e n t r a l s e m i . c o m
R6 (24-July 2019)




 CMJ2000
CMJ0130
THRU
CMJH220
SURFACE MOUNT SILICON
CURRENT LIMITING DIODES
TYPICAL ELECTRICAL CHARACTERISTICS
w w w. c e n t r a l s e m i . c o m
R6 (24-July 2019)






Recommended third-party CMJ2000 Datasheet






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