2SC3123

2SC3123 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3123 TV VHF Mixer Applications High conversion gain: Gce = 23dB (typ.) Low reverse transfer capacitance: Cre = 0.4 pF (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range ymbol VCBO VCEO VEBO 3 IC 50 IB 25 PC 150 Tj 125 Tstg −55~125 Rating 30 20 Unit V V V mA mA mW °C °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA SC-59 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-3F1A reliability significantly even if the operating conditions (i.e. Weight: 0.012 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics S Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Reverse transfer capacitance Transition frequency Conversion gain Noise figure ymbol ICBO IEBO V (BR) CEO hFE Cre fT Gce 20 NF Test Condition VCB ...