2SC3138

2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Amplifier Applications High Voltage Switching Applications Unit: mm High voltage: VCBO = 200 V (max) VCEO = 200 V (max) Small flat package Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 200 V 200 V 5 V 50 mA 20 mA 150 mW 125 °C −55 to 125 °C JEDEC JEITA TOSHIBA TO-236MOD SC-59 2-3F1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.012 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1982-10 1 2014-03-01 2SC3138 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown vo...