2SC3143

Ordering number:ENN1057C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1257/2SC3143 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Features · Very small-sized package permitting the 2SA1257/ 2SC3143-applied sets to be made small and slim. · High breakdown voltage (VCEO≥160V). · Small output capacitance. Package Dimensions unit:mm 2018B [2SA1257/2SC3143] 0.4 3 0.16 0 to 0.1 1.5 0.5 2.5 0.5 1 0.95 0.95 2 1.9 2.9 0.8 1.1 ( ) : 2SA1257 Specifications 1 : Base 2 : Emitter 3 : Collector SANYO : CP Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current Pulse Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)180 (–)160 (–)5 (–)80 (–)150 200 125 –55 to +125 Unit V V V mA mA mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)120V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE VCE=(–)5V, IC=(–)10mA * : The 2SA1257/2SC3143 are classified by 10mA hFE as follows : Marking 2SA1257 : G, 2SC3143 : K, hFE rank : 3, 4, 5 Rank hFE G3 60 to 120 G4 90 to 180 G5 135 to 270 Ratings min typ max Unit (–)0.1 µA (–)0.1 µA 60* 270* Continued on next page. 2SA1257 Rank hFE K3 60 to 120 K4 K5 2SC3143 90 to 180 135 to 270 Any and all SANYO products described or contained...