Document
Ordering number:ENN1058D
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SA1258/2SC3144
60V/3A for High-Speed Drivers Applications
Features
· High fT. · High switching speed. · Wide ASO.
Package Dimensions
unit:mm
2010C
[2SA1258/2SC3144]
10.2 3.6 5.1
4.5 1.3
2.7 6.3
15.1
18.0 5.6
1.2
2.7 14.0
( ) : 2SA1258
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO IEBO hFE
fT
VCE(sat)
VBE(sat)
VCB=(–)40V, IE=0 VEB=(–)5V, IC=0 VCE=(–)2V, IC=(–)1.5A VCE=(–)5V, IC=(–)1.5A
IC=(–)1.5A, IB=(–)3mA
IC=(–)1.5A, IB=(–)3mA
0.8 123 2.55 2.55
0.4
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220AB
Ratings (–)70 (–)60 (–)5 (–)3 (–)5 1.75 20 125
–55 to +125
Unit V V V A A W W ˚C ˚C
Ratings min typ max
Unit
(–)0.1 mA
(–)3 mA
2000 5000
200 MHz
(–1.0) 0.9
(–)1.5
V
(–)2.0 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73102TN (KT)/71598HA (KT)/63095TS/D251MH/3187AT/3085KI/D222KI 8-4742 No.1058-1/4
2SA1258/2SC3144
Continued from preceding page.
Parameter
Collector-to-Base Saturation Voltage Collector-to-Emitter Breakdown Voltage Rise Time Storage Time Fall Time
Symbol
Conditions
V(BR)CBO V(BR)CEO
ton
IC=(–)5mA, IE=0 IC=(–)50mA, RBE=∞ See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Specified Test Circuit (for PNP, the polarity is reversed)
PW=50µs, Duty Cycle≤1% 500IB1=--500IB2=IC=1A
INPUT RB
VR 50 Ω
+ 100µF VBE=--5V
TUT RL 20Ω
+ 470µF
VCC=20V
Electrical Connection
C
B 6kΩ 200Ω
2SA1258
E C
B 6kΩ 200Ω
2SC3144
E
Ratings min typ (–)70 (–)60
0.3 (1.3)
1.2 0.2
max
Unit
V V µs µs µs
Collector Current, IC – A
--3 2SA1258 From top --1000µA --900µA --800µA
--2 --700µA --600µA --500µA
--1
IC -- VCE
--400µA --300µA
--200µA
00
--3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5
-0-0.4
IB=0 --1 --2 --3 --4 --5 Collector-to-Emitter Voltage, VCE – V ITR03143
IC -- VBE
2SA1258 Tc=25°C VCE=--2V
--0.8 --1.2 --1.6 --2.0 --2.4 Base-to-Emitter Voltage, VBE – V ITR03145
Collector Current, IC – A
Collector Current, IC – A
3
2SC3144
From top
1000µA 900µA 800µA 2 700µA
IC -- VCE
600µA 500µA 400µA
300µA
1 200µA
IB=0
0 01 2345
Collector-to-Emitter Voltage, VCE – V ITR03144
IC -- VBE
3.0
2SC3144 Tc=25°C 2.5 VCE=2V
2.0
1.5
1.0
0.5 0 0.4
0.8 1.2 1.6 2.0 2.4
Base-to-Emitter Voltage, VBE – V ITR03146
No.1058-2/4
Collector Current, IC – A
DC Current Gain, hFE
10000 7 5
3 2
1000 7 5
3 2
--0.1
--10
7 5
3
2
hFE -- IC
2SA1258/2SC3144
2SA1258 Tc=25°C VCE=--2V
2
10000 7 5 3 2
hFE -- IC
2SC3144 Tc=25°C VCE=2V
DC Current Gain, hFE
23
5 7 --1.0
2
Collector Current, IC – A
VCE(sat) -- IC
35 ITR03147
2SA1258
Tc=25°C
IC / IB=500
1000 7 5
3 2
100 5
10 7 5
7 0.1
23
5 7 1.0
Collector Current, IC – A
VCE(sat) -- IC
23
5
ITR03148
2SC3144 Tc=25°C IC / IB=500
3 2
Collector-to-Emitter Saturation Voltage, VCE(sat) – V
Collector-to-Emitter Saturation Voltage, VCE(sat) – V
Base-to-Emitter Saturation Voltage, VBE(sat) – V
--1.0
7 5
--0.1
--10
7 5
23
5 7 --1.0
2
Collector Current, IC – A
VBE(sat) -- IC
35 ITR03149
2SA1258 Tc=25°C IC / IB=500
3 2
--1.0
7
--0.1
2
--10 7 ICP
5
IC
3
2
3 5 7 --1.0
2
Collector Current, IC – A
ASO
35 ITR03151
2SA1258 Tc=25°C
1ms 10ms
D1C0o0pmesration
--1.0
7 5
3 2
--0.1
7
5
1ms to 100ms : single pulse
3
3 5 7 --10
23
5 6 7 --100
Collector-to-Emitter Voltage, VCE – V ITR03153
Base-to-Emitter Saturation Voltage, VBE(sat) – V
Collector Current, IC – A
1.0 7 5 0.1
10 7 5
3 2
23
5 7 1.0
2
Collector Current, IC – A
VBE(sat) -- IC
35 ITR03150
2SC3144
Tc=25°C
IC / IB=500
1.0 7
5 0.1 2
10
7 5
ICP=5A
IC=3A
3
2
3 5 7 1.