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2SC3144 Dataheets PDF



Part Number 2SC3144
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Transistors
Datasheet 2SC3144 Datasheet2SC3144 Datasheet (PDF)

Ordering number:ENN1058D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1258/2SC3144 60V/3A for High-Speed Drivers Applications Features · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SA1258/2SC3144] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 ( ) : 2SA1258 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collect.

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Ordering number:ENN1058D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1258/2SC3144 60V/3A for High-Speed Drivers Applications Features · High fT. · High switching speed. · Wide ASO. Package Dimensions unit:mm 2010C [2SA1258/2SC3144] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 2.7 14.0 ( ) : 2SA1258 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE fT VCE(sat) VBE(sat) VCB=(–)40V, IE=0 VEB=(–)5V, IC=0 VCE=(–)2V, IC=(–)1.5A VCE=(–)5V, IC=(–)1.5A IC=(–)1.5A, IB=(–)3mA IC=(–)1.5A, IB=(–)3mA 0.8 123 2.55 2.55 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220AB Ratings (–)70 (–)60 (–)5 (–)3 (–)5 1.75 20 125 –55 to +125 Unit V V V A A W W ˚C ˚C Ratings min typ max Unit (–)0.1 mA (–)3 mA 2000 5000 200 MHz (–1.0) 0.9 (–)1.5 V (–)2.0 V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73102TN (KT)/71598HA (KT)/63095TS/D251MH/3187AT/3085KI/D222KI 8-4742 No.1058-1/4 2SA1258/2SC3144 Continued from preceding page. Parameter Collector-to-Base Saturation Voltage Collector-to-Emitter Breakdown Voltage Rise Time Storage Time Fall Time Symbol Conditions V(BR)CBO V(BR)CEO ton IC=(–)5mA, IE=0 IC=(–)50mA, RBE=∞ See specified Test Circuit tstg See specified Test Circuit tf See specified Test Circuit Specified Test Circuit (for PNP, the polarity is reversed) PW=50µs, Duty Cycle≤1% 500IB1=--500IB2=IC=1A INPUT RB VR 50 Ω + 100µF VBE=--5V TUT RL 20Ω + 470µF VCC=20V Electrical Connection C B 6kΩ 200Ω 2SA1258 E C B 6kΩ 200Ω 2SC3144 E Ratings min typ (–)70 (–)60 0.3 (1.3) 1.2 0.2 max Unit V V µs µs µs Collector Current, IC – A --3 2SA1258 From top --1000µA --900µA --800µA --2 --700µA --600µA --500µA --1 IC -- VCE --400µA --300µA --200µA 00 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 -0-0.4 IB=0 --1 --2 --3 --4 --5 Collector-to-Emitter Voltage, VCE – V ITR03143 IC -- VBE 2SA1258 Tc=25°C VCE=--2V --0.8 --1.2 --1.6 --2.0 --2.4 Base-to-Emitter Voltage, VBE – V ITR03145 Collector Current, IC – A Collector Current, IC – A 3 2SC3144 From top 1000µA 900µA 800µA 2 700µA IC -- VCE 600µA 500µA 400µA 300µA 1 200µA IB=0 0 01 2345 Collector-to-Emitter Voltage, VCE – V ITR03144 IC -- VBE 3.0 2SC3144 Tc=25°C 2.5 VCE=2V 2.0 1.5 1.0 0.5 0 0.4 0.8 1.2 1.6 2.0 2.4 Base-to-Emitter Voltage, VBE – V ITR03146 No.1058-2/4 Collector Current, IC – A DC Current Gain, hFE 10000 7 5 3 2 1000 7 5 3 2 --0.1 --10 7 5 3 2 hFE -- IC 2SA1258/2SC3144 2SA1258 Tc=25°C VCE=--2V 2 10000 7 5 3 2 hFE -- IC 2SC3144 Tc=25°C VCE=2V DC Current Gain, hFE 23 5 7 --1.0 2 Collector Current, IC – A VCE(sat) -- IC 35 ITR03147 2SA1258 Tc=25°C IC / IB=500 1000 7 5 3 2 100 5 10 7 5 7 0.1 23 5 7 1.0 Collector Current, IC – A VCE(sat) -- IC 23 5 ITR03148 2SC3144 Tc=25°C IC / IB=500 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) – V Collector-to-Emitter Saturation Voltage, VCE(sat) – V Base-to-Emitter Saturation Voltage, VBE(sat) – V --1.0 7 5 --0.1 --10 7 5 23 5 7 --1.0 2 Collector Current, IC – A VBE(sat) -- IC 35 ITR03149 2SA1258 Tc=25°C IC / IB=500 3 2 --1.0 7 --0.1 2 --10 7 ICP 5 IC 3 2 3 5 7 --1.0 2 Collector Current, IC – A ASO 35 ITR03151 2SA1258 Tc=25°C 1ms 10ms D1C0o0pmesration --1.0 7 5 3 2 --0.1 7 5 1ms to 100ms : single pulse 3 3 5 7 --10 23 5 6 7 --100 Collector-to-Emitter Voltage, VCE – V ITR03153 Base-to-Emitter Saturation Voltage, VBE(sat) – V Collector Current, IC – A 1.0 7 5 0.1 10 7 5 3 2 23 5 7 1.0 2 Collector Current, IC – A VBE(sat) -- IC 35 ITR03150 2SC3144 Tc=25°C IC / IB=500 1.0 7 5 0.1 2 10 7 5 ICP=5A IC=3A 3 2 3 5 7 1.


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