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NP88N04NHE Dataheets PDF



Part Number NP88N04NHE
Manufacturers NEC
Logo NEC
Description MOS FIELD EFFECT TRANSISTOR
Datasheet NP88N04NHE DatasheetNP88N04NHE Datasheet (PDF)

www.DataSheet.co.kr DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04EHE, NP88N04KHE NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE-E1-AY NP88N04KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) .

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www.DataSheet.co.kr DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N04EHE, NP88N04KHE NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP88N04EHE-E1-AY NP88N04EHE-E2-AY NP88N04KHE-E1-AY NP88N04KHE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP88N04CHE-S12-AZ NP88N04DHE-S12-AY NP88N04MHE-S18-AY NP88N04NHE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g Pure Sn (Tin) Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design (TO-220) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7300 pF TYP. • Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14236EJ8V0DS00 (8th edition) Date Published October 2007 NS Printed in Japan 1999, 2000, 2007 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note2 Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±88 ±352 1.8 288 175 −55 to +175 75/88 562/232 V V A A W W °C °C A mJ Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.52 83.3 °C/W °C/W 2 Data Sheet D14236EJ8V0DS Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 32 V, VGS = 10 V, ID = 88 A IF = 88 A, VGS = 0 V IF = 88 A, VGS = 0 V, di/dt = 100 A/μs TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 10 V, ID = 44 A VGS = 10 V, ID = 44 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 44 A, VGS = 10 V, RG = 1 Ω 2.0 30 3.0 60 3.4 7300 1400 620 38 27 110 32 120 30 43 0.95 64 99 4.3 11000 2100 1120 84 68 220 80 180 MIN. TYP. MAX. 10 ±10 4.0 UNIT μA μA V S mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D14236EJ8V0DS 3 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE TYPICAL CHARACTERISTICS (TA = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 350 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 100 80 60 40 20 0 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 TC - Case Temperature - °C Figure3. FORWARD BIAS SAFE OPERATING AREA 1000 d ite im V) ) L 10 n o S( = ID(DC) RDVGS ( TC - Case Temperature - °C Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 800 10 μs 10 EAS - Singl.


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