2SC3153

Ordering number:EN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3153] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Pulse, PW≤300µs, Duty Cycle≤10% Tc=25˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2A VCE=10V, IC=0.4A VCB=10V, f=1MHz * : For the hFE1 of the 2SC3153, specify two ranks or more in principle. 10 K 20 15 L 30 20 M 40 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Ratings 900 800 7 6 20 3 100 150 –55 to +150 Unit V V V A A A W ˚C ˚C Ratings min typ 10* 8 15 120 max 10 10 40* Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious...