2SC3179
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) sAbsolute maximum ratings (Ta=25°C)
S...
2SC3179
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SA1262) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3179 80 60 6 4 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2.5 B C E
Application : Audio and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=1V IC=2A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz 100max 100max 60min 40min 0.6max 15typ 60typ
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
2SC3179
Unit
µA µA
V V pF
12.0min 16.0±0.7 8.8±0.2
a b
ø3.75±0.2
4.0max
MHz
1.35
0.65 +0.2 -0.1 2.5 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 20 RL (Ω) 10 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 200 IB2 (mA) –200 ton (µs) 0.2typ tstg (µs) 1.9typ tf (µs) 0.29typ
Weight : Approx 2.6g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V CE(s a t) (V ) 4
00 m A
80m A
V CE ( sa t ) – I B Characteristics (Typical)
I C – V BE Temperature Characteristics (Typical)
4 (V CE =4V)
IB
=1
60mA
Collector Current I C (A)
40mA 30mA
2
20mA
Collector Current I C (A)
3
1.0
3
2
p) em
) mp Te se C(
eT
(C
12
25˚
I C =1 A
0
0
1
2
3
4
0 0.005 0.01
0.05
0.1
0.5
1
0 0.4
0.6
0.8
–30
˚C
2A
5˚C
1
10mA
1
(Ca
Ca
3A
as
se
Te
0.5
mp
)
1.0
1.2
Collector-Emitter Voltage V C E (V)
Base Current I B (A)
Base-Emittor V...
