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IXFB62N80Q3 Dataheets PDF



Part Number IXFB62N80Q3
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXFB62N80Q3 DatasheetIXFB62N80Q3 Datasheet (PDF)

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFB62N80Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 800 V 800 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 62 180 62 5 50 1560 -55 ... +150 150 -55 ... +1.

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Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated IXFB62N80Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 800 V 800 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C 62 180 62 5 50 1560 -55 ... +150 150 -55 ... +150 A A A J V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force 30..120/6.7..27 N/lb. 10 g VDSS = ID25 =  RDS(on) trr  800V 62A 140m 300ns PLUS264TM G D S Tab G = Gate D = Drain S = Source Tab = Drain Features  Low Intrinsic Gate Resistance  Low Package Inductance  Avalanche Rated  Fast Intrinsic Rectifier  Low RDS(on) and QG Advantages  High Power Density  Easy to Mount  Space Savings Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = 0.8 • VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 800 V 3.5 6.5 V 200 nA 50 A 4 mA 140 m Applications  DC-DC Converters  Battery Chargers  Switch-Mode and Resonant-Mode Power Supplies  DC Choppers  Temperature and Lighting Controls © 2020 IXYS CORPORATION, All Rights Reserved DS100341B(1/20) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS = 20V, ID = ID = 0.5 • ID25, Note 1 28 48 S Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz 13.6 nF 1260 pF 100 pF RGi Gate Input Resistance 0.13  td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External) 54 ns 20 ns 62 ns 11 ns Qg(on) 270 nC Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = ID = 0.5 • ID25 90 nC Qgd 120 nC RthJC RthCS 0.08C/W 0.13 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 31A, -di/dt = 100A/s VR = 100V, VGS = 0V Characteristic Values Min. Typ. Max. 62 A 250 A 1.5 V 300 ns 1.6 C 13.4 A Note 1. Pulse test, t  300s, duty cycle, d  2%. IXFB62N80Q3 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 ID - Amperes ID - Amperes Fig. 1. Output Characteristics @ TJ = 25oC 60 VGS = 10V 50 40 8V 30 20 7V 10 6V 0 0 1 2 3 4 5 6 7 8 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC 60 VGS = 10V 8V 50 40 7V 30 20 6V 10 5V 0 0 2 4 6 8 10 12 14 16 18 20 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 31A Value vs. Drain Current 2.8 2.6 VGS = 10V 2.4 TJ = 125oC 2.2 2.0 1.8 1.6 1.4 TJ = 25oC 1.2 1.0 0.8 0 20 40 60 80 100 120 140 ID - Amperes ID - Amperes RDS(on) - Normalized ID - Amperes IXFB62N80Q3 Fig. 2. Extended Output Characteristics @ TJ = 25oC 120 VGS = 10V 100 9V 80 60 8V 40 20 7V 0 6V 0 5 10 15 20 25 30 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 31A Value vs. Junction Temperature 3.0 VGS = 10V 2.6 2.2 I D = 62A 1.8 I D = 31A 1.4 1.0 0.6 0.2 -50 70 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade RDS(on) - Normalized © 2020 IXYS CORPORATION, All Rights Reserved IXFB62N80Q3 ID - Amperes Fig. 7. Input Admittance 100 90 80 70 60 50 TJ = 125oC 25oC 40 - 40oC 30 20 10 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VGS - Volts IS - Amperes 200 180 160 140 120 100 80 60 40 20 0 0.2 Fig. 9. Forward Voltage Drop of Intrinsic Diode TJ = 125oC TJ = 25oC 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts 100,000 Fig. 11. Capacitance VGS - Volts g f s - Siemens 100 90 80 70 60 50 40 30 20 10 0 0 Fig. 8. Transconductance TJ = - 40oC 25oC 125oC 10 20 30 40 50 60 70 80 90 100 ID - Amperes 16 VDS = 400V 14 I D = 31A 12 I G = 10mA Fig. 10. Gate Charge 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area 1000 Capaci.


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