Document
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated
IXFB62N80Q3
D G
S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
FC
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
800
V
800
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150C
TC = 25C
62 180
62 5
50
1560
-55 ... +150 150
-55 ... +150
A A
A J
V/ns
W
C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force
30..120/6.7..27
N/lb.
10
g
VDSS =
ID25 =
RDS(on)
trr
800V 62A 140m 300ns
PLUS264TM
G
D
S
Tab
G = Gate
D = Drain
S = Source Tab = Drain
Features
Low Intrinsic Gate Resistance Low Package Inductance Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) and QG
Advantages
High Power Density Easy to Mount Space Savings
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = 0.8 • VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values Min. Typ. Max.
800
V
3.5
6.5 V
200 nA
50 A 4 mA
140 m
Applications
DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode
Power Supplies DC Choppers Temperature and Lighting Controls
© 2020 IXYS CORPORATION, All Rights Reserved
DS100341B(1/20)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
Characteristic Values Min. Typ. Max.
gfs
VDS = 20V, ID = ID = 0.5 • ID25, Note 1
28
48
S
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
13.6
nF
1260
pF
100
pF
RGi
Gate Input Resistance
0.13
td(on) tr td(off) tf
Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1 (External)
54
ns
20
ns
62
ns
11
ns
Qg(on)
270
nC
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = ID = 0.5 • ID25
90
nC
Qgd
120
nC
RthJC RthCS
0.08C/W
0.13
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr QRM
IRM
IF = 31A, -di/dt = 100A/s VR = 100V, VGS = 0V
Characteristic Values Min. Typ. Max.
62 A
250 A
1.5 V
300 ns
1.6
C
13.4
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXFB62N80Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
6,583,505
6,710,463
6,771,478 B2 7,071,537
ID - Amperes
ID - Amperes
Fig. 1. Output Characteristics @ TJ = 25oC
60
VGS = 10V
50
40
8V
30
20
7V 10
6V
0
0
1
2
3
4
5
6
7
8
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
60
VGS = 10V
8V
50
40 7V
30
20
6V 10
5V
0
0
2
4
6
8
10 12 14 16 18 20
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 31A Value vs. Drain Current
2.8
2.6
VGS = 10V
2.4
TJ = 125oC
2.2
2.0
1.8
1.6
1.4
TJ = 25oC
1.2
1.0
0.8 0
20
40
60
80
100
120
140
ID - Amperes
ID - Amperes
RDS(on) - Normalized
ID - Amperes
IXFB62N80Q3
Fig. 2. Extended Output Characteristics @ TJ = 25oC
120
VGS = 10V
100
9V
80
60
8V 40
20 7V
0
6V
0
5
10
15
20
25
30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 31A Value vs. Junction Temperature
3.0
VGS = 10V 2.6
2.2 I D = 62A
1.8
I D = 31A
1.4
1.0
0.6
0.2 -50
70
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs. Case Temperature
60
50
40
30
20
10
0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
RDS(on) - Normalized
© 2020 IXYS CORPORATION, All Rights Reserved
IXFB62N80Q3
ID - Amperes
Fig. 7. Input Admittance
100
90
80
70
60
50
TJ = 125oC
25oC 40
- 40oC 30
20
10
0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGS - Volts
IS - Amperes
200 180 160 140 120 100
80 60 40 20
0 0.2
Fig. 9. Forward Voltage Drop of Intrinsic Diode
TJ = 125oC
TJ = 25oC
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
100,000
Fig. 11. Capacitance
VGS - Volts
g f s - Siemens
100 90 80 70 60 50 40 30 20 10 0 0
Fig. 8. Transconductance
TJ = - 40oC
25oC 125oC
10 20 30 40 50 60 70 80 90 100
ID - Amperes
16
VDS = 400V 14
I D = 31A
12
I G = 10mA
Fig. 10. Gate Charge
10
8
6
4
2
0
0
50
100
150
200
250
300
350
400
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
1000
Capaci.