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IXFB82N60Q3 Dataheets PDF



Part Number IXFB82N60Q3
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXFB82N60Q3 DatasheetIXFB82N60Q3 Datasheet (PDF)

www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFB82N60Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 600V 82A 75mΩ 300ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by .

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www.DataSheet.co.kr Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFB82N60Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 600V 82A 75mΩ 300ns PLUS264TM Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 600 600 ±30 ±40 82 240 82 4 50 1560 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 V V V V A A A J V/ns W °C °C °C °C °C N/lb. z z z z z G D S Tab D = Drain Tab = Drain G = Gate S = Source Features Low Intrinsic Gate Resistance Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages High Power Density Easy to Mount Space Savings g z z Applications z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.5 6.5 V V z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls ±200 nA 50 μA 3 mA 75 mΩ VGS = 10V, ID = 0.5 • ID25, Note 1 © 2011 IXYS CORPORATION, All Rights Reserved DS100339(05/11) Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IXFB82N60Q3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.13 VGS = 10V, VDS = 0.5 • VDSS, ID = ID = 0.5 • ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 33 55 13.5 1450 120 0.12 40 13 60 14 275 88 120 S nF pF pF Ω ns ns ns ns nC nC nC 0.08 °C/W °C/W PLUS264TM (IXFB) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 41A, -di/dt = 100A/μs VR = 100V, VGS = 0V 1.9 15.4 Characteristic Values Min. Typ. Max. 82 330 1.5 A A V 300 ns μC A Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,1.


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