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2SC3233

Toshiba Semiconductor

NPN TRIPLE DIFFUSED TRANSISTOR

2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and High Voltage Switching Appl...


Toshiba Semiconductor

2SC3233

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2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications · t · Excellent switching times: tr = 1.0 µs (max) f = 1.0 µs (max), (IC = 0.8 A) Unit: mm High collector breakdown voltage: VCEO = 400 V Maximum Ratings (Ta = 25°C) Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C ymbol VCBO VCEO VEBO IC IB 0. PC Tj 150 Tstg −55 to 150 Rating 500 400 7 2 5 1.0 20 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-7B1A Weight: 0.36 g (typ.) JEDEC JEITA TOSHIBA ― ― 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 http://www.Datasheet4U.com 2SC3233 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) tr Test Condition VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 1 A IC = 1 A, IB = 0.2 A IC = 1 A, IB = 0.2 A OUTPUT 250 Ω Min ― ― 500 400 20 8 ― ― ― Typ. ― ― ― ― ― ― ― ― ― Max 100 1 ― ― ― ― 1.0 1.5 1.0 V V Unit µA mA V V 20 µs INPUT IB1 IB1 IB2 Switching time Storage time ...




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