2SC3233
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3233
Switching Regulator and High Voltage Switching Appl...
2SC3233
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type
2SC3233
Switching
Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications
· t · Excellent switching times: tr = 1.0 µs (max)
f = 1.0 µs (max), (IC = 0.8 A)
Unit: mm
High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics S Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C ymbol VCBO VCEO VEBO IC IB 0. PC Tj 150 Tstg −55 to 150 Rating 500 400 7 2 5 1.0 20 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-7B1A
Weight: 0.36 g (typ.)
JEDEC JEITA TOSHIBA
― ― 2-7J1A
Weight: 0.36 g (typ.)
1
2002-07-23
http://www.Datasheet4U.com
2SC3233
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) tr Test Condition VCB = 400 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 0.1 A VCE = 5 V, IC = 1 A IC = 1 A, IB = 0.2 A IC = 1 A, IB = 0.2 A OUTPUT 250 Ω Min ― ― 500 400 20 8 ― ― ― Typ. ― ― ― ― ― ― ― ― ― Max 100 1 ― ― ― ― 1.0 1.5 1.0 V V Unit µA mA V V
20 µs INPUT IB1
IB1 IB2
Switching time
Storage time
...