IXFT15N100Q3

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT15N100Q3 IXFH15N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1000 V 1000 V  30 V  40 V 15 A 45 A 7.5 A 1.0 J 50 V/ns 690 W -55 ... +150 150 -55 ... +150  C  C  C 300 °C 260 °C 1.13 / 10 4.0 6.0 Nm/lb.in. g g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 1000 V 3.5 6.5 V           100 nA 25 A 1.5 mA 1.05  VDSS = ID25 = RDS(on)  trr  1000V 15A 1.05 250ns TO-268 (IXFT) TO-247 (IXFH) G S D (Tab) G D S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  Low Intrinsic Gate Resistance  International Standard Packages  Low Package Inductance  Fast Intrinsic Rectifier  Low RDS(on) and QG Advantages  High Power Density  Easy to Mount  Space Savings Applications  DC-DC Converters  Battery Chargers ...