Power MOSFET
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT44N50Q3 IXFH44...
Description
Q3-Class HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT44N50Q3 IXFH44N50Q3
D G
S
Symbol
VDSS VDGR
VGSS VGSM ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL TSOLD
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
500
V
500
V
30
V
40
V
44
A
130
A
44
A
1.5
J
50
V/ns
830
W
-55 ... +150 150
-55 ... +150
C C C
300
°C
260
°C
1.13 / 10
4.0 6.0
Nm/lb.in.
g g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
500
V
3.5
6.5 V
100 nA
25 A 1 mA
140 m
VDSS =
ID25 =
RDS(on)
trr
500V 44A 140m 250ns
TO-268 (IXFT)
G S D (Tab)
TO-247 (IXFH)
G DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
Low Intrinsic Gate Resistance International Standard Packages Low Package Inductance Avalanche Rated Fast Intrinsic Rectifier Low RDS(on) and QG
Advantages
High Power Density Easy to Mount Space Savings
Applications
DC-DC Converters Battery...
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