2SC3267

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Power Switching Applications 2SC3267 Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A · Complementary to 2SA1297 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 20 6 2 0.5 400 150 -55~150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 20 V, IE = 0 IEBO VEB = 6 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 V (BR) EBO IE = 0.1 mA, IC = 0 hFE (1) (Note) VCE = 2 V, IC = 100 mA hFE (2) VCE (sat) VBE fT Cob VCE = 2 V, IC = 2 A IC = 2 A, IB = 0.1 A VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Note: hFE (1) classification Y: 120~240, GR: 200~400, BL: 350~700 JEDEC ― JEITA ― TOSHIBA 2-4E1A Weight: 0.13 g (typ.) Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 20 ¾ ¾ V 6 ¾¾ V 120 ¾ 700 75 ¾ ¾ ¾ ¾ 0.5 V ¾ ¾ 0.85 V ¾ 120 ¾ MHz ¾ 30 ¾ pF 1 2003-03-25 2SC3267 2 2003-03-25 2SC3267 RESTRICTIONS ON P...