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CTLT953-M833 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR
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CTLT953-M833 SURFACE MOUNT HIGH CURRENT
PNP SILICON
TRANSISTOR
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT953-M833 is a high performance 5.0A High Current
PNP Transistor designed for applications where small size and operational efficiency are prime requirements. With a maximum power dissipation of 4.5W, and a very small package footprint, this device is 80% smaller than a comparible SOT-223 device. This leadless package design has a watts per unit area at least twice that of equivalent package devices. MARKING CODE: CHA4
NPN Complement: CTLT853-M833
TLM833 CASE
FEATURES: High Voltage (140V) High Thermal Efficiency High Current (IC=5.0A) 3 x 3mm TLM™ case Low VCE(SAT) = 420mV MAX @ 4.0A
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance (Note 1) Thermal Resistance (Note 2) Thermal Resistance (Note 3) SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg ΘJA ΘJA ΘJA 140 100 6.0 5.0 4.5 4.0 2.5 -65 to +150 27.78 31.25 50.00 UNITS V V V A W W W °C °C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=100V ICBO VCB=100V, TA=100°C ICER VCE=100V, RBE≤1.0kΩ IEBO VEB=6.0V BVCBO IC=100μA 140 170 BVCER IC=10mA, RBE≤1.0kΩ 140 150 BVCEO IC=10mA 100 12...