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2SC3284 Dataheets PDF



Part Number 2SC3284
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon NPN Transistor
Datasheet 2SC3284 Datasheet2SC3284 Datasheet (PDF)

LAPT 2SC3284 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Application : Audio and General Purpose sAbsolute maximum ratings Symbol Ratings VCBO 150 VCEO 150 VEBO IC IB PC Tj Tstg 5 14 3 125(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings Unit ICBO IEBO V(BR)CEO VCB=150V VEB=5V IC=25mA 100max µA 100max µA 150min V hFE VCE(sat) fT COB VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE.

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LAPT 2SC3284 Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1303) Application : Audio and General Purpose sAbsolute maximum ratings Symbol Ratings VCBO 150 VCEO 150 VEBO IC IB PC Tj Tstg 5 14 3 125(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings Unit ICBO IEBO V(BR)CEO VCB=150V VEB=5V IC=25mA 100max µA 100max µA 150min V hFE VCE(sat) fT COB VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=–2A VCB=10V, f=1MHz 50min∗ 2.0max 60typ 200typ V MHz pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 60 12 5 10 –5 0.5 IB2 ton tstg tf (A) (µs) (µs) (µs) –0.5 0.2typ 1.5typ 0.35typ External Dimensions MT-100(TO3P) 2.0 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 4.0 19.9±0.3 20.0min 4.0max a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +-00..12 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a. Part No. b. Lot No. Collector Current IC(A) 750mA I C– V CE Characteristics (Typical) 14 650000mmAA 400mA 300mA 12 200mA 150mA 8 100mA 50mA 4 IB=20mA 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 I C– V BE Temperature Characteristics (Typical) (VCE=4V) 14 10 2 Collector Current IC(A) –30˚C (Case Temp) Temp) 1 IC=10A 5A 0 0 0.2 0.4 0.6 0.8 1.0 Base Current IB(A) 5 (Case 125˚C 25˚C 0 0 1 2 Base-Emittor Voltage VBE(V) Transient Thermal Resistance θ j-a( ˚ C / W ) DC Current Gain hFE DC Current Gain hFE h FE– I C Characteristics (Typical) (VCE=4V) 200 h FE– I C Temperature Characteristics (Typical) (VCE=4V) 200 125˚C 100 Typ 50 100 25˚C –30˚C 50 θ j-a– t Characteristics 3 1 0.5 20 0.02 0.1 0.5 1 Collector Current IC(A) 5 10 14 20 0.02 0.1 0.5 1 Collector Current IC(A) 5 1014 0.1 1 10 100 Time t(ms) 1000 2000 f T– I E Characteristics (Typical) (VCE=12V) 80 Typ 60 Cut-off Frequency fT(MHZ) 40 20 0 –0.02 –0.1 –1 –10 Emitter Current IE(A) 66 Collector Current IC(A) Safe Operating Area (Single Pulse) 40 10 DC 1 10m 00ms 1ms s 5 Pc–Ta Derating 130 100 Maximum Power Dissipation PC(W) With Infinite heatsink 1 Without Heatsink 0.5 Natural Cooling 0.2 3 10 100 200 Collector-Emitter Voltage VCE(V) 50 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) .


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