2SC3295

2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Switching Applications · · · · High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 150 125 -55~125 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA TO-236MOD SC-59 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob NF (1) Noise figure NF (2) Test Condition VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10 kW VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 10 kW Min ¾ ¾ 600 ¾ 100 ¾ ¾ ¾ Typ. ¾ ¾ ¾ 0.12 250 3.5 0.5 0.3 Max 0.1 0.1 3600 0.25 ¾ ¾ ¾ dB ¾ V MHz pF Unit mA mA Note: hFE classification A: 600~1800, B: 1200~3600 Marking 1 2003-03-25 Free Datasheet http://www.datasheet4u.com/ 2SC3295 2 2003-03-25 Free Datasheet http://www.datasheet4u.com/ 2SC3295 3 F r 2003-03...