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TSM1N80 Datasheet, Equivalent, Power MOSFET.

N-Channel Power MOSFET

N-Channel Power MOSFET

 

 

 

Part TSM1N80
Description N-Channel Power MOSFET
Feature TSM1N80 Taiwan Semiconductor N-Channel Power MOSFET 800V, 0.
3A, 21.
6Ω FEATU RES
• Advanced planar process
• 100 % avalanche tested
• Fast switching A PPLICATION
• Power Supply
• Lightin g KEY PERFORMANCE PARAMETERS PARAMETE R VALUE UNIT VDS RDS(on) (max) Qg 8 00 21.
6 5 V Ω nC SOT-223 Notes: Mo isture sensitivity level: level 3.
Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAM ETER SYMBOL LIMIT Drain-Source Volta ge Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current, Repetitive .
Manufacture Taiwan Semiconductor
Datasheet
Download TSM1N80 Datasheet
Part TSM1N80
Description N-Channel Power MOSFET
Feature TSM1N80 Taiwan Semiconductor N-Channel Power MOSFET 800V, 0.
3A, 21.
6Ω FEATU RES
• Advanced planar process
• 100 % avalanche tested
• Fast switching A PPLICATION
• Power Supply
• Lightin g KEY PERFORMANCE PARAMETERS PARAMETE R VALUE UNIT VDS RDS(on) (max) Qg 8 00 21.
6 5 V Ω nC SOT-223 Notes: Mo isture sensitivity level: level 3.
Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAM ETER SYMBOL LIMIT Drain-Source Volta ge Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current, Repetitive .
Manufacture Taiwan Semiconductor
Datasheet
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