NVTFS5826NL

NVTFS5826NL Power MOSFET 60 V, 24 mW, 20 A, Single N−Channel Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5826NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Curr2e,n3t,R4Y) J−mb (Notes 1, Power Dissipation RYJ−mb (Notes 1, 2, 3) Steady State Tmb = 25°C Tmb = 100°C Tmb = 25°C Tmb = 100°C Continuous Drain Curr3e,n4t)RqJA (Notes 1 & Power Dissipation RqJA (Notes 1, 3) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 60 ±20 20 14 22 11 7.6 5.4 3.2 1.6 127 −55 to +175 V V A W A W A ...