PMV16UN

www.DataSheet.co.kr SO T2 PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 3 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 5.8 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 15 Max Unit 20 8 5.8 18 V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NXP Semiconductors PMV16UN 20 V, 5.8 A N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 mbb076 Simplified outline 3 Graphic symbol D G SOT23 (TO-236AB) S 3. Ordering information Table 3. Ordering information Package Name PMV16UN TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. PMV16UN [1] % = p...