N-channel standard level MOSFET
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TO -22 0A B
PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level...
Description
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TO -22 0A B
PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level MOSFET
Rev. 3 — 23 June 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Tj RDSon Quick reference data Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 25 A; VDS = 30 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 50 A; Vsup ≤ 60 V; RGS = 50 Ω; unclamped 4.7 nC nC 20.9 Typ Max Unit 60 50 86 175 V A W °C drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
Static characteristics 23.7 mΩ
12.6 14.8 mΩ
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 44 mJ
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