N-channel MOSFET
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TO -22 0A B
PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
Rev. 1 — 27 Octob...
Description
www.DataSheet.co.kr
TO -22 0A B
PSMN4R3-100PS
N-channel 100 V 4.3 mΩ standard level MOSFET in TO-220
Rev. 1 — 27 October 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) EDS(AL)S gate-drain charge total gate charge non-repetitive drain-source avalanche energy VGS = 10 V; ID = 75 A; VDS = 50 V; see Figure 14; see Figure 15 49 170 537 nC nC mJ
[2]
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 6.6 3.7
Max 100 120 338 175 7.8 4.3
Unit V A W °C mΩ mΩ
Static characteristics
Avalanche ruggedness VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω; Unclamped
[1]
Continuous current limited by package
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