2SC3314

Transistor 2SC3314 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1323 Unit: mm 4.0±0.2 3.0±0.2 0.7±0.1 s Features q q q q Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking +0.2 0.45–0.1 15.6±0.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings 30 20 5 30 300 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 1:Emitter 2:Collector 3:Base 1 2 3 1.27 1.27 2.54±0.15 EIAJ:SC–72 New S Type Package s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Common emitter reverse transfer capacitance Reverse transfer impedance (Ta=25˚C) Symbol VCBO VCEO VEBO hFE * Conditions IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 10V, IC = 1mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA VCB = 10V, IE = –1mA, f = 200MHz VCB = 10V, IE = –1mA, f = 5MHz VCE = 10V, IC = 1mA, f = 10.7MHz VCB = 10V, IE = –1mA, f = 2MHz min 30 20 5 70 typ max 2.0±0.2 Unit V V V 220 0.1 0.7 V V MHz 4.0 1.5 50 dB pF Ω VCE(sat) VBE fT NF Cre Zrb 150 300 2.8 *h FE ...