N-channel MOSFET
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I2P AK
PSMN5R0-100ES
N-channel 100 V 5 mΩ standard level MOSFE...
Description
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I2P AK
PSMN5R0-100ES
N-channel 100 V 5 mΩ standard level MOSFET in I2PAK
Rev. 3 — 26 September 2011 Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources
1.3 Applications
DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 100 °C; see Figure 12; see Figure 13 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 13 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 10 V; ID = 75 A; VDS = 50 V; see Figure 14; see Figure 15 VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 100 V; RGS = 50 Ω; Unclamped 49 170 nC nC
[2]
Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2
[1]
Min -55 -
Typ 7.7
Max Unit 100 120 338 175 9 V A W °C mΩ
Static characteristics
-
4.3
5
mΩ
Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 537 mJ
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