Document
2SC3328
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3328
Power Amplifier Applications Power Switching Applications
Unit: mm
• • •
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1315
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 5 2 1 900 150 −55 to 150 Unit V V V A A mW °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ― 2-5J1A
Weight: 0.36 g (typ.)
1
2004-07-07
Free Datasheet http://www.Datasheet4U.com
2SC3328
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 µs IB1 Switching time Storage time tstg Input Test Condition VCB = 80 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5 A IC = 1 A, IB = 0.05 A IC = 1 A, IB = 0.05 A VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Output 30 Ω Min ― ― 80 70 40 ― ― ― ― ― Typ. ― ― ― ― ― 0.15 0.9 100 30 0.2 Max 1.0 1.0 ― 240 ― 0.5 1.2 ― ― ― V V MHz pF Unit µA µA V
IB1 IB2
IB2
―
1.0
―
µs
VCC = 30 V Fall time tf IB1 = −IB2 = 0.05 A, duty cycle ≤ 1% ― 0.2 ―
Note: hFE (1) classification
O: 70 to 140, Y: 120 to 240
Marking
C3328
Part No. (or abbreviation code) Lot No.
Characteristics indicator
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2004-07-07
Free Datasheet http://www.Datasheet4U.com
2SC3328
IC – VCE
2.0 35 25 20
VCE – IC
(V)
15 Common emitter Ta = 25°C
IC (A)
VCE
1.6 10 1.2
IB = 5 mA
10
15
20
30
0.8
IB = 5 mA Common emitter Ta = 25°C 0 2 4 6 8 10 12
Collector-emitter voltage
Collector current
40 50
0.4
0 0
0
0.4
0.8
1.2
1.6
2.0
2.4
Collector-emitter voltage
VCE
(V)
Collector current IC (A)
VCE – IC
1 Common emitter 1
VCE – IC
Common emitter
(V)
Ta = 100°C 0.8 IB = 5 mA 0.6 10 15 20 30 40
(V)
VCE
VCE
0.8
IB = 5 mA 10 15 20 30 40
Ta = −55°C 50
Collector-emitter voltage
Collector-emitter voltage
0.6
0.4
50
0.4
70
0.2
0.2
)
0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0
0.4
0.8
1.2
1.6
2.0
2.4
Collector current IC (A)
Collector current IC
(A)
hFE – IC
500 300 Common emitter VCE = 2 V Ta = 100°C 100 50 30 25 −55 0.5
VCE (sat) – IC
Collector-emitter saturation voltage VCE (sat) (V)
Common emitter 0.3 IC/IB = 20
hFE
DC current gain
0.1 0.05
Ta = 100°C 25 −55
0.03
10 0.01
0.03
0.1
0.3
1
0.01 0.01
0.03
0.1
0.3
1
Collector current IC (A)
Collector current
IC (A)
3
2004-07-07
Free Datasheet http://www.Datasheet4U.com
2SC3328
VBE (sat) – IC
Base-emitter saturation voltage VCE (sat) (V)
3 Common emitter IC/IB = 20 1 Ta = −55°C 1.6 2.0 Common emitter VCE = 2 V
IC – VBE
0.5 0.3
100
25
IC (A) Collector current
1.2
0.8
Ta = 100°C
25
−55
0.1 0.01
0.03
0.1
0.3
1
0.4
Collector current IC (A)
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.6
Base-emitter voltage
VBE
(V)
Safe Operating Area
5 3 1 ms* 10 ms* 1
PC – Ta
1200
(mW) PC Collector power dissipation
IC max (pulsed)* IC max (continuous)
1000
IC (A)
0.5 0.3 1 s* DC operation Ta = 25°C
100 ms*
800
Collector current
600
0.1 0.05 0.03 *: Single nonrepetitive pulse Ta = 25°C 0.01 Curves must be derated linearly with increase in 0.005 temperature. 0.003 0.3 1 3 10
400
200
VCEO max 30 100 300
0 0
40
80
120
160
200
Ambient temperature
Ta
(°C)
Collector-emitter voltage
VCE
(V)
4
2004-07-07
Free Datasheet http://www.Datasheet4U.com
2SC3328
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
030619EAA
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges .