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SW30N06 Datasheet, Equivalent, N-channel MOSFET.

N-channel MOSFET

N-channel MOSFET

 

 

 

Part SW30N06
Description N-channel MOSFET
Feature www.
DataSheet.
co.
kr SAMWIN SW30N06 N-c hannel MOSFET Features ■ High rugged ness ■ RDS(ON) (Max 0.
036 Ω)@VGS=10 V ■ Gate Charge (Typ 20nC) ■ Improv ed dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-251 TO-252 BVDSS : 60V ID : 30A RDS(ON) : 0.
036 ohm 2 1 1 2 3 1 2 3 2 3 1.
Gate 2.
Drain 3.
Source 1 General Description These N- channel enhancement mode power field ef fect transistors are produced using SAM WIN’s proprietary, planar stripe, DMO S technology.
This advanced technology enable power MOSFET to have better char acteristics, such as fast switching tim e, low on resistance, low ga .
Manufacture Samwin
Datasheet
Download SW30N06 Datasheet
Part SW30N06
Description N-channel MOSFET
Feature www.
DataSheet.
co.
kr SAMWIN SW30N06 N-c hannel MOSFET Features ■ High rugged ness ■ RDS(ON) (Max 0.
036 Ω)@VGS=10 V ■ Gate Charge (Typ 20nC) ■ Improv ed dv/dt Capability ■ 100% Avalanche Tested TO-220 TO-251 TO-252 BVDSS : 60V ID : 30A RDS(ON) : 0.
036 ohm 2 1 1 2 3 1 2 3 2 3 1.
Gate 2.
Drain 3.
Source 1 General Description These N- channel enhancement mode power field ef fect transistors are produced using SAM WIN’s proprietary, planar stripe, DMO S technology.
This advanced technology enable power MOSFET to have better char acteristics, such as fast switching tim e, low on resistance, low ga .
Manufacture Samwin
Datasheet
Download SW30N06 Datasheet

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