SW3205

www.DataSheet.co.kr SAMWIN SW3205 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 0.008 Ω)@VGS=10V ■ Gate Charge (Typ 146nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-220 BVDSS : 55V ID : 110A RDS(ON) : 0.008 ohm 1 2 2 3 1 3 1. Gate 2. Drain 3. Source General Description This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics. Order Codes Item 1 Sales Type SW P 3205 Marking SW3205 Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current Continuous Drain Current Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. =25oC) (note 2) (note 1) (note 3) (@TC=25oC) (@TC=100oC) (note 1) Parameter Value 55 110 75 390 ± 20 1270 20 5 200 1.3 -55 ~ + 150 300 Unit V A A A V mJ mJ V/ns W W/oC oC oC Thermal characteristics Symbol Rthjc Rthcs Rthja Parameter Min. Thermal resistance, Junction to case Thermal resistance, Case to Si...